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Title: Alternative gate dielectric materials
Authors: Van Elshocht, S.
De Gendt, S.
Adelmann, D.
Brunco, D.
Caymax, M.
Conard, T.
Delugas, P.
Lehnen, P.
Shamiryan, D.
Vos, R.
Witters, P.
Zimmerman, P.
Meuris, M.
Heyns, M.
Issue Date: 2006
Source: Kar, S. & De Gendt, S. & Houssa, M. & Iwai, H. & Landheer, D. (Ed.) ECS Meeting: vol. 210.
Abstract: The semiconductor industry is facing the challenging task of finding a candidate to replace silicon oxide, which has been the CMOS gate dielectric of choice for more than 50 years. A material with a dielectric constant (k) higher than SiO2 will allow making the dielectric thicker by a factor of k/k(SiO2), hence lowering the gate current leakage levels, and this without reduction of the capacitance and thus performance.
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Category: C2
Type: Proceedings Paper
Appears in Collections:Research publications

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