Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2408
Title: Evidence for source side injection hot carrier effects on lateral DMOS transistors
Authors: ARESU, Stefano 
DE CEUNINCK, Ward 
Van den Bosch, G
Groeseneken, G
Moens, P.
MANCA, Jean 
Wojciechowski, D
Gassot, P
Issue Date: 2004
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Source: MICROELECTRONICS RELIABILITY, 44(9-11). p. 1621-1624
Abstract: The hot carrier degradation behavior of lateral integrated DMOS transistors is studied in detail with a state-of-the-art, high-resolution measurement equipment. It has been demonstrated that two degradation mechanisms are present: electron mobility reduction due to interface trap formation and injection and trapping of hot electrons at the source side of the channel. It will be shown that the Source Side Injection mechanism gives rise to rather moderate changes of the linear drain current (I-d,I-lim) but significant changes of the saturation drain current (I-d,I-sat) and the threshold voltage (V-t). (C) 2004 Elsevier Ltd. All rights reserved.
Notes: IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC VZW, B-3001 Louvain, Belgium. Katholieke Univ Leuven, ESAT Dept, Louvain, Belgium. AMI Semicond Belgium BVBA, B-9700 Oudenaarde, Belgium.Aresu, S, IMEC VZW, Div IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.stefano.aresu@luc.ac.be
Document URI: http://hdl.handle.net/1942/2408
ISSN: 0026-2714
e-ISSN: 1872-941X
DOI: 10.1016/j.microrel.2004.07.080
ISI #: 000224280000059
Category: A1
Type: Journal Contribution
Validations: ecoom 2005
Appears in Collections:Research publications

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