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http://hdl.handle.net/1942/2408
Title: | Evidence for source side injection hot carrier effects on lateral DMOS transistors | Authors: | ARESU, Stefano DE CEUNINCK, Ward Van den Bosch, G Groeseneken, G Moens, P. MANCA, Jean Wojciechowski, D Gassot, P |
Issue Date: | 2004 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | MICROELECTRONICS RELIABILITY, 44(9-11). p. 1621-1624 | Abstract: | The hot carrier degradation behavior of lateral integrated DMOS transistors is studied in detail with a state-of-the-art, high-resolution measurement equipment. It has been demonstrated that two degradation mechanisms are present: electron mobility reduction due to interface trap formation and injection and trapping of hot electrons at the source side of the channel. It will be shown that the Source Side Injection mechanism gives rise to rather moderate changes of the linear drain current (I-d,I-lim) but significant changes of the saturation drain current (I-d,I-sat) and the threshold voltage (V-t). (C) 2004 Elsevier Ltd. All rights reserved. | Notes: | IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC VZW, B-3001 Louvain, Belgium. Katholieke Univ Leuven, ESAT Dept, Louvain, Belgium. AMI Semicond Belgium BVBA, B-9700 Oudenaarde, Belgium.Aresu, S, IMEC VZW, Div IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.stefano.aresu@luc.ac.be | Document URI: | http://hdl.handle.net/1942/2408 | ISSN: | 0026-2714 | e-ISSN: | 1872-941X | DOI: | 10.1016/j.microrel.2004.07.080 | ISI #: | 000224280000059 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2005 |
Appears in Collections: | Research publications |
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