Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2408
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dc.contributor.authorARESU, Stefano-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorVan den Bosch, G-
dc.contributor.authorGroeseneken, G-
dc.contributor.authorMoens, P.-
dc.contributor.authorMANCA, Jean-
dc.contributor.authorWojciechowski, D-
dc.contributor.authorGassot, P-
dc.date.accessioned2007-11-13T22:53:48Z-
dc.date.available2007-11-13T22:53:48Z-
dc.date.issued2004-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 44(9-11). p. 1621-1624-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/2408-
dc.description.abstractThe hot carrier degradation behavior of lateral integrated DMOS transistors is studied in detail with a state-of-the-art, high-resolution measurement equipment. It has been demonstrated that two degradation mechanisms are present: electron mobility reduction due to interface trap formation and injection and trapping of hot electrons at the source side of the channel. It will be shown that the Source Side Injection mechanism gives rise to rather moderate changes of the linear drain current (I-d,I-lim) but significant changes of the saturation drain current (I-d,I-sat) and the threshold voltage (V-t). (C) 2004 Elsevier Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleEvidence for source side injection hot carrier effects on lateral DMOS transistors-
dc.typeJournal Contribution-
dc.identifier.epage1624-
dc.identifier.issue9-11-
dc.identifier.spage1621-
dc.identifier.volume44-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notesIMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC VZW, B-3001 Louvain, Belgium. Katholieke Univ Leuven, ESAT Dept, Louvain, Belgium. AMI Semicond Belgium BVBA, B-9700 Oudenaarde, Belgium.Aresu, S, IMEC VZW, Div IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.stefano.aresu@luc.ac.be-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.microrel.2004.07.080-
dc.identifier.isi000224280000059-
item.fulltextWith Fulltext-
item.fullcitationARESU, Stefano; DE CEUNINCK, Ward; Van den Bosch, G; Groeseneken, G; Moens, P.; MANCA, Jean; Wojciechowski, D & Gassot, P (2004) Evidence for source side injection hot carrier effects on lateral DMOS transistors. In: MICROELECTRONICS RELIABILITY, 44(9-11). p. 1621-1624.-
item.contributorARESU, Stefano-
item.contributorDE CEUNINCK, Ward-
item.contributorVan den Bosch, G-
item.contributorGroeseneken, G-
item.contributorMoens, P.-
item.contributorMANCA, Jean-
item.contributorWojciechowski, D-
item.contributorGassot, P-
item.validationecoom 2005-
item.accessRightsClosed Access-
crisitem.journal.issn0026-2714-
crisitem.journal.eissn1872-941X-
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