Evidence for source side injection hot carrier effects on lateral DMOS transistors

Abstract

The hot carrier degradation behavior of lateral integrated DMOS transistors is studied in detail with a state-of-the-art, high-resolution measurement equipment. It has been demonstrated that two degradation mechanisms are present: electron mobility reduction due to interface trap formation and injection and trapping of hot electrons at the source side of the channel. It will be shown that the Source Side Injection mechanism gives rise to rather moderate changes of the linear drain current (I-d,I-lim) but significant changes of the saturation drain current (I-d,I-sat) and the threshold voltage (V-t). (C) 2004 Elsevier Ltd. All rights reserved.