Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2920
Title: Reliability aspects of high temperature power MOSFETs
Authors: MANCA, Jean 
Wondrak, W
Schaper, W
CROES, Kristof 
D'HAEN, Jan 
DE CEUNINCK, Ward 
Dieval, B
Hartnagel, HL
D'OLIESLAEGER, Marc 
DE SCHEPPER, Luc 
Issue Date: 2000
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Source: MICROELECTRONICS RELIABILITY, 40(8-10). p. 1679-1682
Abstract: Gate oxide reliability and thermal shock resistance of power MOSFETs for high temperature applications, have been investigated, by accelerated tests and several analytical and electrical techniques. Thermal shock tests have been performed between -40 degrees C and 200 degrees C with subsequent electrical tests and failure analysis. Time Dependent Dielectric Breakdown (TDDB) of the gate oxide: has been studied in detail by means of in-situ leakage current measurements at various voltages and temperatures. A statistical analysis of the results yields information on the underlying failure time distribution, failure mechanisms and lifetime. (C) 2000 Elsevier Science Ltd. All rights reserved.
Notes: Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium. DaimlerChrysler AG, Res & Technol, D-60528 Frankfurt, Germany. Tech Univ Darmstadt, Inst High Frequency Tech, D-64397 Darmstadt, Germany.Manca, JV, Limburgs Univ Ctr, Inst Mat Res, Univ Campus, B-3590 Diepenbeek, Belgium.
Document URI: http://hdl.handle.net/1942/2920
DOI: 10.1016/S0026-2714(00)00187-6
ISI #: 000089532800072
Category: A1
Type: Journal Contribution
Validations: ecoom 2001
Appears in Collections:Research publications

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