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http://hdl.handle.net/1942/31495
Title: | Integration of Al2O3 as front and rear surface passivation for large-area screen-printed p-type Si PERC | Authors: | VERMANG, Bart CHOULAT, Patrick Goverde, H Horzel, J John, J Mertens, R POORTMANS, Jef |
Issue Date: | 2012 | Publisher: | ELSEVIER SCIENCE BV | Source: | ELSEVIER SCIENCE BV, p. 325 -329 | Series/Report: | Energy Procedia | Abstract: | Atomic layer deposition (ALD) of thin Al2O3 (<= 10 nm) films is used to improve both front and rear surface passivation of large-area screen-printed p-type CZ Si passivated emitter and rear cells (PERC). As emitter passivation, the SiNx anti reflection coating (ARC) is capped with Al2O3, giving improved hydrogenation during co-firing and a front recombination current (J(0,front)) of 128 +/- 5 fA/cm(2). As rear surface passivation, a blister-free stack of Al2O3/SiOx/SiNx is employed, leading to optimal back reflection and a rear recombination current (J(0,rear)) of 92 +/- 6 fA/cm(2). Internal quantum efficiency (IQE) measurements clearly confirm the improved passivation properties of both Al2O3-based stacks, even compared to passivation stacks based on thermally grown SiO2. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference. | Keywords: | Photovoltaics;Si;PERC;surface passivation;Al2O3;ALD | Document URI: | http://hdl.handle.net/1942/31495 | DOI: | 10.1016/j.egypro.2012.07.071 | ISI #: | WOS:000313202000052 | Rights: | 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference CC BY-NC-ND license | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
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