Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31592
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dc.contributor.authorHeyns, Marc-
dc.contributor.authorBellenger, Florence-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorCaymax, Matty-
dc.contributor.authorCantoro, Mirco-
dc.contributor.authorDe Gendt, Stefan-
dc.contributor.authorDe Jaeger, Brice-
dc.contributor.authorDelabie, Annelies-
dc.contributor.authorEneman, Geert-
dc.contributor.authorGroeseneken, Guido-
dc.contributor.authorHellings, Geert-
dc.contributor.authorHoussa, Michel-
dc.contributor.authorIacopi, Francesca-
dc.contributor.authorLeonelli, Daniele-
dc.contributor.authorLin, Dennis-
dc.contributor.authorMagnus, Wim-
dc.contributor.authorMartens, Koen-
dc.contributor.authorMerckling, Clement-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorMitard, Jerome-
dc.contributor.authorPenaud, Julien-
dc.contributor.authorPourtois, Geoffrey-
dc.contributor.authorScarrozza, Marc-
dc.contributor.authorSimoen, Eddy-
dc.contributor.authorSoree, Bart-
dc.contributor.authorVan Elshocht, Sven-
dc.contributor.authorVandenberghe, William-
dc.contributor.authorVandooren, Anne-
dc.contributor.authorVereecke, Philippe-
dc.contributor.authorVerhulst, Anne-
dc.contributor.authorWang, Wei-E-
dc.date.accessioned2020-08-06T09:29:16Z-
dc.date.available2020-08-06T09:29:16Z-
dc.date.issued2010-
dc.date.submitted2020-08-06T08:51:40Z-
dc.identifier.citationDusa, MV; Conley, W (Ed.). Optical Microlithography XXIII, SPIE-INT SOC OPTICAL ENGINEERING, (Art N° UNSP 764003)-
dc.identifier.isbn978-0-8194-8054-5-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/1942/31592-
dc.description.abstractThe use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap.-
dc.language.isoen-
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING-
dc.relation.ispartofseriesProceedings of SPIE-
dc.rights2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.-
dc.subject.othernanoelectronics-
dc.subject.otherhigh mobility materials-
dc.subject.otherGe-
dc.subject.otherIII/V-
dc.subject.othernew devices-
dc.subject.othertunnelFET's-
dc.subject.othernanowires-
dc.subject.otherMOLECULAR-BEAM EPITAXY-
dc.subject.otherOXIDE-SEMICONDUCTOR CAPACITORS-
dc.subject.otherFIELD-EFFECT TRANSISTORS-
dc.subject.otherLAYER-DEPOSITED AL2O3-
dc.subject.otherELECTRICAL-PROPERTIES-
dc.subject.otherELECTRONIC-PROPERTIES-
dc.subject.otherSURFACE PASSIVATION-
dc.subject.otherSILICON NANOWIRES-
dc.subject.otherLOW-TEMPERATURE-
dc.subject.otherFERMI-LEVEL-
dc.titleShaping the future of nanoelectronics beyond the Si roadmap with new materials and devices-
dc.typeProceedings Paper-
local.bibliographicCitation.authorsDusa, MV-
local.bibliographicCitation.authorsConley, W-
local.bibliographicCitation.conferencedateFEB 23-25, 2010-
local.bibliographicCitation.conferencenameConference on Optical Microlithography XXIII-
local.bibliographicCitation.conferenceplaceSan Jose, CA-
local.bibliographicCitation.jcatC1-
dc.description.notesHeyns, M (corresponding author), IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.-
local.publisher.place1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr7640-
local.bibliographicCitation.artnrUNSP 764003-
dc.identifier.doi10.1117/12.852587-
dc.identifier.isiWOS:000285084400001-
dc.contributor.orcidhoussa, michel/0000-0003-1844-3515; Merckling,-
dc.contributor.orcidClement/0000-0003-3084-2543; Groeseneken, Guido/0000-0003-3763-2098;-
dc.contributor.orcidMartens, Koen/0000-0001-7135-5536; heyns, marc/0000-0002-1199-4341;-
dc.contributor.orcidIacopi, Francesca/0000-0002-3196-0990; Soree, Bart/0000-0002-4157-1956;-
dc.contributor.orcidVandenberghe, William/0000-0002-6717-5046; Brammertz,-
dc.contributor.orcidGuy/0000-0003-1404-7339-
dc.identifier.eissn1996-756X-
local.provider.typewosris-
local.bibliographicCitation.btitleOptical Microlithography XXIII-
local.uhasselt.uhpubno-
local.description.affiliation[Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne; Wang, Wei-E] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.-
local.description.affiliation[Heyns, Marc] Katholieke Univ Leuven, Dept Met & Mat Engn, Leuven, Belgium.-
local.description.affiliation[Bellenger, Florence; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Martens, Koen; Vandenberghe, William] Katholieke Univ Leuven, Dept Elect Engn, Leuven, Belgium.-
local.description.affiliation[Eneman, Geert; Martens, Koen] FWO Vlaanderen, Brussels, Belgium.-
local.description.affiliation[Houssa, Michel] Katholieke Univ Leuven, Dept Phys, Leuven, Belgium.-
local.description.affiliation[Penaud, Julien] IMEC, Riber, Leuven, Belgium.-
local.description.affiliation[Wang, Wei-E] IMEC, INTEL, Leuven, Belgium.-
item.fulltextWith Fulltext-
item.contributorHeyns, Marc-
item.contributorBellenger, Florence-
item.contributorBRAMMERTZ, Guy-
item.contributorCaymax, Matty-
item.contributorCantoro, Mirco-
item.contributorDe Gendt, Stefan-
item.contributorDe Jaeger, Brice-
item.contributorDelabie, Annelies-
item.contributorEneman, Geert-
item.contributorGroeseneken, Guido-
item.contributorHellings, Geert-
item.contributorHoussa, Michel-
item.contributorIacopi, Francesca-
item.contributorLeonelli, Daniele-
item.contributorLin, Dennis-
item.contributorMagnus, Wim-
item.contributorMartens, Koen-
item.contributorMerckling, Clement-
item.contributorMEURIS, Marc-
item.contributorMitard, Jerome-
item.contributorPenaud, Julien-
item.contributorPourtois, Geoffrey-
item.contributorScarrozza, Marc-
item.contributorSimoen, Eddy-
item.contributorSoree, Bart-
item.contributorVan Elshocht, Sven-
item.contributorVandenberghe, William-
item.contributorVandooren, Anne-
item.contributorVereecke, Philippe-
item.contributorVerhulst, Anne-
item.contributorWang, Wei-E-
item.fullcitationHeyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne & Wang, Wei-E (2010) Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices. In: Dusa, MV; Conley, W (Ed.). Optical Microlithography XXIII, SPIE-INT SOC OPTICAL ENGINEERING, (Art N° UNSP 764003).-
item.accessRightsOpen Access-
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