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http://hdl.handle.net/1942/31592| Title: | Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices | Authors: | Heyns, Marc Bellenger, Florence BRAMMERTZ, Guy Caymax, Matty Cantoro, Mirco De Gendt, Stefan De Jaeger, Brice Delabie, Annelies Eneman, Geert Groeseneken, Guido Hellings, Geert Houssa, Michel Iacopi, Francesca Leonelli, Daniele Lin, Dennis Magnus, Wim Martens, Koen Merckling, Clement MEURIS, Marc Mitard, Jerome Penaud, Julien Pourtois, Geoffrey Scarrozza, Marc Simoen, Eddy Soree, Bart Van Elshocht, Sven Vandenberghe, William Vandooren, Anne Vereecke, Philippe Verhulst, Anne Wang, Wei-E |
Issue Date: | 2010 | Publisher: | SPIE-INT SOC OPTICAL ENGINEERING | Source: | Dusa, MV; Conley, W (Ed.). Optical Microlithography XXIII, SPIE-INT SOC OPTICAL ENGINEERING, (Art N° UNSP 764003) | Series/Report: | Proceedings of SPIE | Series/Report no.: | 7640 | Abstract: | The use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap. | Notes: | Heyns, M (corresponding author), IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. | Keywords: | nanoelectronics;high mobility materials;Ge;III/V;new devices;tunnelFET's;nanowires;MOLECULAR-BEAM EPITAXY;OXIDE-SEMICONDUCTOR CAPACITORS;FIELD-EFFECT TRANSISTORS;LAYER-DEPOSITED AL2O3;ELECTRICAL-PROPERTIES;ELECTRONIC-PROPERTIES;SURFACE PASSIVATION;SILICON NANOWIRES;LOW-TEMPERATURE;FERMI-LEVEL | Document URI: | http://hdl.handle.net/1942/31592 | ISBN: | 978-0-8194-8054-5 | DOI: | 10.1117/12.852587 | ISI #: | WOS:000285084400001 | Rights: | 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. | Category: | C1 | Type: | Proceedings Paper |
| Appears in Collections: | Research publications |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| 76114_1.pdf | Published version | 2.35 MB | Adobe PDF | View/Open |
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