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|Title:||Design of a new test structure for the study of electromigration with early resistance change measurements||Authors:||DE CEUNINCK, Ward
VAN OLMEN, Jan
DE SCHEPPER, Luc
|Issue Date:||1997||Publisher:||Elsevier Science Ltd.||Source:||MICROELECTRONICS AND RELIABILITY, 37(12). p. 1813-1816||Abstract:||A new test structure has been designed in order to perform accurate early resistance change measurements in metal lines submitted to high current stress. This test structure integrates both advantages of the so-called ''absolute'' and ''bridge'' techniques, resulting in accurate resistance measurements with a high resolution for both the current-stressed and reference strip. Due to the improved measurement configuration, the aging kinetics of a metal line under current stress can be studied in more detail. (C) 1997 Elsevier Science Ltd.||Notes:||DeCeuninck, W, LIMBURG UNIV CTR,INST MAT RES IMO,DIV MAT PHYS,WETENSCHAPSPK,B-3590 DIEPENBEEK,BELGIUM.||Document URI:||http://hdl.handle.net/1942/3253||DOI:||10.1016/S0026-2714(97)00014-0||ISI #:||A1997YJ55000003||Type:||Journal Contribution|
|Appears in Collections:||Research publications|
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