Temperature Cycling Test on Ultrasonic Aluminum Bonds and Conductive Adhesive of Copper Indium Gallium (di)Selenide (CIGS) Thin-Film Photovoltaic Solar Panel

Abstract

This work assesses the bondability and temperature cycling reliability of ultrasonic Al bonds on Molybdenum (Mo) and Molybdenum (di)Selenide (MoSe2) layers of a Copper Indium Gallium (di)Selenide (CIGS) thin-film photovoltaic (TFPV) solar panel. The bondability and reliability of ultrasonic Al bonds were assessed using a qualitative load-displacement profile and quantitative peel force data obtained from a peel test, as well as contact resistance R-c measured using the transmission line method. It was discovered that using the peel test to examine the bondability and reliability of ultrasonic Al bonds and conductive adhesives was quite beneficial. Varied forms of ultrasonic Al bonds and conductive adhesives, either on Mo or MoSe2 layers, have different shapes of load-displacement profiles before and after the application of temperature cycling. Therefore, comparing the load-displacement profile, peel force, and R-c could offer a complete bonding mechanism, failure modes, and failure mechanism for ultrasonic Al bond on MoSe2 and Mo layers of CIGS TFPV solar panels before and after temperature cycling.