Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/7225
Title: A high resolution method for measuring hot carrier degradation in matched transistor pairs
Authors: DREESEN, Raf 
DE CEUNINCK, Ward 
DE SCHEPPER, Luc 
Groeseneken, G.
Issue Date: 1997
Source: Proceedings of the 8th European symposium on reliability of electron devices, failure physics and analysis. p. 1533-1536.
Document URI: http://hdl.handle.net/1942/7225
Type: Proceedings Paper
Appears in Collections:Research publications

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