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http://hdl.handle.net/1942/7814
Title: | Lifetime modeling of intrinsic gate oxide breakdown at high temperature | Authors: | MOONEN, Rob Vanmeerbeek, P LEKENS, Geert DE CEUNINCK, Ward Moens, P. BOUTSEN, Jan |
Issue Date: | 2007 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | MICROELECTRONICS RELIABILITY, 47(9-11). p. 1389-1393 | Abstract: | High resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3-13.2 MV/cm at high temperatures (160-240 degrees C). It is proven that even at these high temperatures log(t(BD)) is proportional to 1/E-OX and the time-to-breakdown mechanism matches the anode hole injection (AHI) model (1/E-OX model). In addition it is presented that the TDDB activation energy Ea for this type of gate oxide has linear dependence on stress electric oxide field. (C) 2007 Elsevier Ltd. All rights reserved. | Notes: | Hasselt Univ, Mat Res Inst, Diepenbeek, B-3590 Belgium. AMI Semiconduct Belgium BVBA, Oudenaarde, B-9700 Belgium. IMEC vzw, Div IMOMEC, Diepenbeek, B-3590 Belgium. XIOS Hogesch Limburg, Diepenbeek, B-3590 Belgium.Moonen, R, Hasselt Univ, Mat Res Inst, Wetenschapspk 1, Diepenbeek, B-3590 Belgium. | Document URI: | http://hdl.handle.net/1942/7814 | ISSN: | 0026-2714 | e-ISSN: | 1872-941X | DOI: | 10.1016/j.microrel.2007.07.039 | ISI #: | 000250604600015 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2008 |
Appears in Collections: | Research publications |
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