Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/7814
Title: Lifetime modeling of intrinsic gate oxide breakdown at high temperature
Authors: MOONEN, Rob 
Vanmeerbeek, P
LEKENS, Geert 
DE CEUNINCK, Ward 
Moens, P.
Boutsen, J
Issue Date: 2007
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Source: MICROELECTRONICS RELIABILITY, 47(9-11). p. 1389-1393
Abstract: High resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3-13.2 MV/cm at high temperatures (160-240 degrees C). It is proven that even at these high temperatures log(t(BD)) is proportional to 1/E-OX and the time-to-breakdown mechanism matches the anode hole injection (AHI) model (1/E-OX model). In addition it is presented that the TDDB activation energy Ea for this type of gate oxide has linear dependence on stress electric oxide field. (C) 2007 Elsevier Ltd. All rights reserved.
Notes: Hasselt Univ, Mat Res Inst, Diepenbeek, B-3590 Belgium. AMI Semiconduct Belgium BVBA, Oudenaarde, B-9700 Belgium. IMEC vzw, Div IMOMEC, Diepenbeek, B-3590 Belgium. XIOS Hogesch Limburg, Diepenbeek, B-3590 Belgium.Moonen, R, Hasselt Univ, Mat Res Inst, Wetenschapspk 1, Diepenbeek, B-3590 Belgium.
Document URI: http://hdl.handle.net/1942/7814
ISSN: 0026-2714
e-ISSN: 1872-941X
DOI: 10.1016/j.microrel.2007.07.039
ISI #: 000250604600015
Category: A1
Type: Journal Contribution
Validations: ecoom 2008
Appears in Collections:Research publications

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