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Title: Characterization of boron doped diamond epilayers grown in a NIRIM type reactor
Authors: MORTET, Vincent 
DAENEN, Michael 
Teraji, T.
LAZEA, Andrada 
Vorlicek, V.
D'HAEN, Jan 
Issue Date: 2008
Source: DIAMOND AND RELATED MATERIALS, 17(7-10). p. 1330-1334
Abstract: Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The boron doped layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases. (C) 2008 Elsevier B.V. All rights reserved.
Notes: [Mortet, V.; Daenen, M.; Lazea, A.; D'Haen, J.; Haenen, K.; D'Olieslaeger, M.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Mortet, V.; Lazea, A.; D'Haen, J.; Haenen, K.; D'Olieslaeger, M.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Teraji, T.] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan. [Vorlicek, V.] Acad Sci Czech Republic, Inst Phys, CZ-18221 Prague 8, Czech Republic.
Keywords: CVD diamond; homoepitaxy; p-type doping; electrical properties; optical properties
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ISSN: 0925-9635
e-ISSN: 1879-0062
DOI: 10.1016/j.diamond.2008.01.087
ISI #: 000259598300059
Category: A1
Type: Journal Contribution
Validations: ecoom 2009
Appears in Collections:Research publications

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