Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9096
Title: Titanium nitride grown by sputtering for contacts on boron doped diamond
Authors: MORTET, Vincent 
Elmazria, O.
DEFERME, Wim 
DAENEN, Michael 
D'HAEN, Jan 
LAZEA, Andrada 
Morel, A.
HAENEN, Ken 
D'OLIESLAEGER, Marc 
Issue Date: 2007
Publisher: WILEY-V C H VERLAG GMBH
Source: Plasma Processes and Polymers, 4(S1). p. S139-S143
Abstract: Due to its exceptional properties, semiconducting diamond is expected to be used for electrically active devices which can be operated in harsh environments. Such devices need reliable ohmic contacts that can also stand hostile environments. Titanium nitride (TiN) is a chemically stable material with good electrical conductivity. In this work, TiN contacts on boron doped diamond have been made and characterized. TiN films were deposited by reactive magnetron sputtering. Boron doped diamond layers were deposited by plasma enhanced chemical vapour deposition. Optimal deposition conditions have been determined to obtain TiN films with low resistivity (~100 µOhm.cm), high reflectance in IR region and low stress. TiN contacts show ohmic behaviour after annealing at 750°C.
Document URI: http://hdl.handle.net/1942/9096
ISSN: 1612-8850
e-ISSN: 1612-8869
DOI: 10.1002/ppap.200730506
ISI #: 000207735200028
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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