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http://hdl.handle.net/1942/913
Title: | Understanding Oxide Degradation Mechanisms in ultra-thin SiO2 through High-Speed, High Resolution in-situ Measurements | Authors: | ARESU, Stefano DE CEUNINCK, Ward Degraeve, R. Kaczer, B. KNUYT, Gilbert DE SCHEPPER, Luc |
Issue Date: | 2005 | Publisher: | Elsevier B.V. | Source: | Microelectronic Engineering, 80(1). p. 182-185 | Abstract: | A model is proposed and validated for the degradation mechanisms occurring in ultra-thin SiO2 at real operation conditions, based on high-resolution, high-speed in-situ measurements. This state-of-the-art set-up proves that oxide degradation still occurs at low stress conditions and allows distinguishing quantitatively the SILC-contribution from the contribution due to trapping. | Keywords: | Reliability of electronic components | Document URI: | http://hdl.handle.net/1942/913 | ISSN: | 0167-9317 | e-ISSN: | 1873-5568 | DOI: | 10.1016/j.mee.2005.04.065 | ISI #: | 000231517000043 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2006 |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
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Aresu INFOS2005.pdf | 208.6 kB | Adobe PDF | View/Open |
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