Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/913
Title: Understanding Oxide Degradation Mechanisms in ultra-thin SiO2 through High-Speed, High Resolution in-situ Measurements
Authors: ARESU, Stefano 
DE CEUNINCK, Ward 
Degraeve, R.
Kaczer, B.
KNUYT, Gilbert 
DE SCHEPPER, Luc 
Issue Date: 2005
Publisher: Elsevier B.V.
Source: Microelectronic Engineering, 80(1). p. 182-185
Abstract: A model is proposed and validated for the degradation mechanisms occurring in ultra-thin SiO2 at real operation conditions, based on high-resolution, high-speed in-situ measurements. This state-of-the-art set-up proves that oxide degradation still occurs at low stress conditions and allows distinguishing quantitatively the SILC-contribution from the contribution due to trapping.
Keywords: Reliability of electronic components
Document URI: http://hdl.handle.net/1942/913
ISSN: 0167-9317
e-ISSN: 1873-5568
DOI: 10.1016/j.mee.2005.04.065
ISI #: 000231517000043
Category: A1
Type: Journal Contribution
Validations: ecoom 2006
Appears in Collections:Research publications

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