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Title: | Low-temperature transport in highly boron-doped nanocrystalline diamond | Authors: | Achatz, P. Gajewski, W. Bustarret, E. Marcenat, C. Piquerel, R. Chapelier, C. Dubouchet, T. WILLIAMS, Oliver HAENEN, Ken Garrido, J. A. Stutzmann, M. |
Issue Date: | 2009 | Publisher: | AMER PHYSICAL SOC | Source: | PHYSICAL REVIEW B, 79(20) | Abstract: | We studied the transport properties of highly boron-doped nanocrystalline diamond thin films at temperatures down to 50 mK. The system undergoes a doping-induced metal-insulator transition with an interplay between intergranular conductance g and intragranular conductance g(0), as expected for a granular system. The conduction mechanism in the case of the low-conductivity films close to the metal-insulator transition has a temperature dependence similar to Efros-Shklovskii type of hopping. On the metallic side of the transition, in the normal state, a logarithmic temperature dependence of the conductivity is observed, as expected for a metallic granular system. Metallic samples far away from the transition show similarities to heavily boron-doped single-crystal diamond. Close to the transition, the behavior is richer. Global phase coherence leads in both cases to superconductivity (also checked by ac susceptibility), but a peak in the low-temperature magnetoresistance measurements occurs for samples close to the transition. Corrections to the conductance according to superconducting fluctuations account for this negative magnetoresistance. | Notes: | [Achatz, P.; Gajewski, W.; Garrido, J. A.; Stutzmann, M.] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany. [Achatz, P.; Bustarret, E.] CNRS, Inst Neel, F-38042 Grenoble 9, France. [Achatz, P.; Bustarret, E.] Univ Grenoble 1, F-38042 Grenoble 9, France. [Achatz, P.; Marcenat, C.; Piquerel, R.; Chapelier, C.; Dubouchet, T.] LaTEQS, CEA, INAC, SPSMS, F-38054 Grenoble 9, France. [Williams, O. A.; Haenen, K.] Univ Hasselt, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Williams, O. A.; Haenen, K.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. | Keywords: | boron; diamond; electric admittance; fluctuations in superconductors; magnetoresistance; metal-insulator transition; nanostructured materials; optical susceptibility; thin films | Document URI: | http://hdl.handle.net/1942/9825 | ISSN: | 1098-0121 | DOI: | 10.1103/PhysRevB.79.201203 | ISI #: | 000266501500009 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2010 |
Appears in Collections: | Research publications |
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