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|Title:||Low-temperature transport in highly boron-doped nanocrystalline diamond||Authors:||Achatz, P.
Garrido, J. A.
|Issue Date:||2009||Publisher:||AMER PHYSICAL SOC||Source:||PHYSICAL REVIEW B, 79(20)||Abstract:||We studied the transport properties of highly boron-doped nanocrystalline diamond thin films at temperatures down to 50 mK. The system undergoes a doping-induced metal-insulator transition with an interplay between intergranular conductance g and intragranular conductance g(0), as expected for a granular system. The conduction mechanism in the case of the low-conductivity films close to the metal-insulator transition has a temperature dependence similar to Efros-Shklovskii type of hopping. On the metallic side of the transition, in the normal state, a logarithmic temperature dependence of the conductivity is observed, as expected for a metallic granular system. Metallic samples far away from the transition show similarities to heavily boron-doped single-crystal diamond. Close to the transition, the behavior is richer. Global phase coherence leads in both cases to superconductivity (also checked by ac susceptibility), but a peak in the low-temperature magnetoresistance measurements occurs for samples close to the transition. Corrections to the conductance according to superconducting fluctuations account for this negative magnetoresistance.||Notes:||[Achatz, P.; Gajewski, W.; Garrido, J. A.; Stutzmann, M.] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany. [Achatz, P.; Bustarret, E.] CNRS, Inst Neel, F-38042 Grenoble 9, France. [Achatz, P.; Bustarret, E.] Univ Grenoble 1, F-38042 Grenoble 9, France. [Achatz, P.; Marcenat, C.; Piquerel, R.; Chapelier, C.; Dubouchet, T.] LaTEQS, CEA, INAC, SPSMS, F-38054 Grenoble 9, France. [Williams, O. A.; Haenen, K.] Univ Hasselt, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Williams, O. A.; Haenen, K.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium.||Keywords:||boron; diamond; electric admittance; fluctuations in superconductors; magnetoresistance; metal-insulator transition; nanostructured materials; optical susceptibility; thin films||Document URI:||http://hdl.handle.net/1942/9825||ISSN:||1098-0121||DOI:||10.1103/PhysRevB.79.201203||ISI #:||000266501500009||Category:||A1||Type:||Journal Contribution||Validations:||ecoom 2010|
|Appears in Collections:||Research publications|
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