MEURIS, Marc

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MEURIS, Marc
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marc.meuris@uhasselt.be
 
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Publications

Results 121-140 of 154 (Search time: 0.011 seconds).

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Issue DateTitleContributor(s)TypeCat.
1212010Catalytic forming gas anneal on III-V/Ge MOS systemsWang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
1222010Influence of interface traps on high-mobility channel performanceHellings, Geert; Eneman, Geert; BRAMMERTZ, Guy; Martens, Koen; Mitard, Jerome; Wang, Wei-E; Hoffmann, Thomas; MEURIS, Marc; De Meyer, KristinProceedings PaperC1
1232010Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOSLin, D.; Waldron, N.; BRAMMERTZ, Guy; MARTENS, Klara; Wang, W. -E; Sioncke, S.; Delabie, A.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T.Proceedings PaperC1
1242010Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) SubstratesWang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Journal ContributionA1
1252010Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacksMolle, Alessandro; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; BRAMMERTZ, Guy; MEURIS, MarcJournal ContributionA1
1262009Ge and III/V devices for advanced CMOSHeyns, Marc; Adelmann, Christoph; BRAMMERTZ, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mittard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-EProceedings PaperC1
1272009Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solutionLin, D.; BRAMMERTZ, Guy; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Wang, W. E.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T.Proceedings PaperC1
1282009Electrical Properties of III-V/Oxide InterfacesBRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Alian, A.; Merckling, C.; Penaud, J.; Kohen, D.; Wang, W. -E; Sioncke, S.; Delabie, A.; MEURIS, Marc; Cayrnax, M.; Heyns, M.Proceedings PaperC1
1292009High-kappa Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOSHeyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven; Wang, Wei-EProceedings PaperC1
1302009On the interface state density at In0.53Ga0.47As/oxide interfacesBRAMMERTZ, Guy; Lin, H-C.; Caymax, M.; MEURIS, Marc; Heyns, M.; Passlack, M.Journal ContributionA1
1312009Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substratesMolle, Alessandro; BRAMMERTZ, Guy; Lamagna, Luca; Fanciulli, Marco; MEURIS, Marc; Spiga, SabinaJournal ContributionA1
1322009The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfacesLin, H. C.; BRAMMERTZ, Guy; Martens, Koen; de Valicourt, Guilhem; Negre, Laurent; Wang, Wei-E; Tsai, Wilman; MEURIS, Marc; Heyns, MarcJournal ContributionA1
1332009Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs SubstratesSioncke, Sonja; Delabie, Annelies; BRAMMERTZ, Guy; Conard, Thierry; Franquet, Alexis; Caymax, Matty; Urbanzcyk, Adam; Heyns, Marc; MEURIS, Marc; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M.Journal ContributionA1
1342009Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)Caymax, Matty; BRAMMERTZ, Guy; Delabie, Annelies; Sioncke, Sonja; Lin, Dennis; Scarrozza, Marco; Pourtois, Geoffrey; Wang, Wei-E; MEURIS, Marc; Heyns, MarcJournal ContributionA1
1352009Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOSMerckling, C.; Penaud, J.; Kohen, D.; Bellenger, F.; Alian, A.; BRAMMERTZ, Guy; El-Kazzi, M.; Houssa, M.; Dekoster, J.; Caymax, M.; MEURIS, Marc; Heyns, M. M.Journal ContributionA1
1362009Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulatorLin, Han-Chung; Wang, Wei-E.; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, MarcJournal ContributionA1
1372009A DLTS study of Pt/Al2O3/InxGa1 - xAs CapacitorsSimoen, E.; BRAMMERTZ, Guy; Penaud, J.; Merckling, C.; Lin, H. C.; Wang, W. -E.; MEURIS, MarcProceedings PaperC1
1382008Alternative Channel Materials for MOS DevicesHeyns, M; Adelmann, C; BRAMMERTZ, Guy; Brunco, D; Caymax, M; De Jaeger, B; Delabie, A; Eneman, G; Houssa, M; Lin, D; Martens, K; Merckling, C; MEURIS, Marc; Mittard, J; Penaud, J; Pourtois, G; Scarrozza, M; Simoen, E; Sioncke, S; Wang, WEProceedings PaperC1
1392008Capacitance-Voltage (CV) Characterization of GaAs-Oxide InterfacesBRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Mercier, D.; Merckling, C.; Penaud, J.; Adelmann, C.; Sioncke, S.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
1402008Atomic Layer Deposition of High-kappa Dielectric Layers on Ge and III-V MOS ChannelsDelabie, A.; Alian, A.; Bellenger, F.; BRAMMERTZ, Guy; Brunco, D. P.; Caymax, M.; Conard, T.; Franquet, A.; Houssa, M.; Sioncke, S.; Van Elshocht, S.; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M.; Afanas'ev, V. V.; Stesmans, A.; Heyns, M. M.; MEURIS, MarcProceedings PaperC1
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