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| | Issue Date | Title | Contributor(s) | Type | Cat. |
| 101 | 2010 | Influence of interface traps on high-mobility channel performance | Hellings, Geert; Eneman, Geert; BRAMMERTZ, Guy; Martens, Koen; Mitard, Jerome; Wang, Wei-E; Hoffmann, Thomas; MEURIS, Marc; De Meyer, Kristin | Proceedings Paper | C1 |
| 102 | 2010 | Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications | Nguyen, N. D.; Wang, G.; BRAMMERTZ, Guy; Leys, M.; Waldron, N.; WINDERICKX, Jori; Lismont, K.; Dekoster, J.; Loo, R.; MEURIS, Marc; Degroote, S.; Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M.; Caymax, M. | Proceedings Paper | C1 |
| 103 | 2010 | ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation | Sioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D.; Tallarida, M. | Proceedings Paper | C1 |
| 104 | 2010 | Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS | Lin, D.; Waldron, N.; BRAMMERTZ, Guy; MARTENS, Klara; Wang, W. -E; Sioncke, S.; Delabie, A.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T. | Proceedings Paper | C1 |
| 105 | 2010 | Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne; Wang, Wei-E | Proceedings Paper | C1 |
| 106 | 2010 | Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates | Wang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 107 | 2010 | Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks | Molle, Alessandro; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; BRAMMERTZ, Guy; MEURIS, Marc | Journal Contribution | A1 |
| 108 | 2009 | Electrical Properties of III-V/Oxide Interfaces | BRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Alian, A.; Merckling, C.; Penaud, J.; Kohen, D.; Wang, W. -E; Sioncke, S.; Delabie, A.; MEURIS, Marc; Cayrnax, M.; Heyns, M. | Proceedings Paper | C1 |
| 109 | 2009 | Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution | Lin, D.; BRAMMERTZ, Guy; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Wang, W. E.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T. | Proceedings Paper | C1 |
| 110 | 2009 | High-kappa Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOS | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven; Wang, Wei-E | Proceedings Paper | C1 |
| 111 | 2009 | Ge and III/V devices for advanced CMOS | Heyns, Marc; Adelmann, Christoph; BRAMMERTZ, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mittard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-E | Proceedings Paper | C1 |
| 112 | 2009 | On the interface state density at In0.53Ga0.47As/oxide interfaces | BRAMMERTZ, Guy; Lin, H-C.; Caymax, M.; MEURIS, Marc; Heyns, M.; Passlack, M. | Journal Contribution | A1 |
| 113 | 2009 | The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces | Lin, H. C.; BRAMMERTZ, Guy; Martens, Koen; de Valicourt, Guilhem; Negre, Laurent; Wang, Wei-E; Tsai, Wilman; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 114 | 2009 | Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates | Molle, Alessandro; BRAMMERTZ, Guy; Lamagna, Luca; Fanciulli, Marco; MEURIS, Marc; Spiga, Sabina | Journal Contribution | A1 |
| 115 | 2009 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substrates | Sioncke, Sonja; Delabie, Annelies; BRAMMERTZ, Guy; Conard, Thierry; Franquet, Alexis; Caymax, Matty; Urbanzcyk, Adam; Heyns, Marc; MEURIS, Marc; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M. | Journal Contribution | A1 |
| 116 | 2009 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper) | Caymax, Matty; BRAMMERTZ, Guy; Delabie, Annelies; Sioncke, Sonja; Lin, Dennis; Scarrozza, Marco; Pourtois, Geoffrey; Wang, Wei-E; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 117 | 2009 | Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator | Lin, Han-Chung; Wang, Wei-E.; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 118 | 2009 | Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS | Merckling, C.; Penaud, J.; Kohen, D.; Bellenger, F.; Alian, A.; BRAMMERTZ, Guy; El-Kazzi, M.; Houssa, M.; Dekoster, J.; Caymax, M.; MEURIS, Marc; Heyns, M. M. | Journal Contribution | A1 |
| 119 | 2009 | A DLTS study of Pt/Al2O3/InxGa1 - xAs Capacitors | Simoen, E.; BRAMMERTZ, Guy; Penaud, J.; Merckling, C.; Lin, H. C.; Wang, W. -E.; MEURIS, Marc | Proceedings Paper | C1 |
| 120 | 2008 | Alternative Channel Materials for MOS Devices | Heyns, M; Adelmann, C; BRAMMERTZ, Guy; Brunco, D; Caymax, M; De Jaeger, B; Delabie, A; Eneman, G; Houssa, M; Lin, D; Martens, K; Merckling, C; MEURIS, Marc; Mittard, J; Penaud, J; Pourtois, G; Scarrozza, M; Simoen, E; Sioncke, S; Wang, WE | Proceedings Paper | C1 |
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