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http://hdl.handle.net/1942/2510
Title: | High-resolution SILC measurements of thin SiO2 ultra low voltages | Authors: | ARESU, Stefano DE CEUNINCK, Ward DREESEN, Raf CROES, Kristof ANDRIES, Ellen MANCA, Jean DE SCHEPPER, Luc DEGRAEVE, Maria Kaczer, B. D'OLIESLAEGER, Marc D'HAEN, Jan |
Issue Date: | 2002 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | MICROELECTRONICS RELIABILITY, 42(9-11). p. 1485-1489 | Abstract: | In order to study in detail the kinetics of degradation at ultra low voltages, close to real life operating condition, SILC on ultra-thin SiO2 oxides was measured in-situ by using a high-resolution measurement technique. A large gate stress voltage range was measured from -3.1 V down to -1.5 V with a step of 0.2 V. Although the SILC-curves at low voltages show a different behaviour, no significant change in the degradation mechanisms could be observed proving that extrapolations of high voltage measurements to operating voltage are indeed possible, provided that the correct extrapolation model is used. (C) 2002 Elsevier Science Ltd. All rights reserved. | Notes: | IMOMEC, IMEC Div, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC, B-3001 Heverlee, Belgium.Aresu, S, IMOMEC, IMEC Div, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | Document URI: | http://hdl.handle.net/1942/2510 | ISSN: | 0026-2714 | e-ISSN: | 1872-941X | DOI: | 10.1016/S0026-2714(02)00175-0 | ISI #: | 000178889900046 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2003 |
Appears in Collections: | Research publications |
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