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http://hdl.handle.net/1942/2735
Title: | High-resolution in-situ study of gold electromigration: test time reduction | Authors: | CROES, Kristof DREESEN, Raf MANCA, Jean DE CEUNINCK, Ward DE SCHEPPER, Luc Tielemans, L Van der Wel, P |
Issue Date: | 2001 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | MICROELECTRONICS RELIABILITY, 41(9-10). p. 1439-1442 | Abstract: | The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts (DeltaR/R-0=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times (DeltaR/R-0=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. (C) 2001 Elsevier Science Ltd. All rights reserved. | Notes: | Mat Res Inst, B-3590 Diepenbeek, Belgium. Xpeqt, B-3980 Tessenderlo, Belgium. Philips Semicond, NL-6539 AE Nijmegen, Netherlands.Croes, K, Mat Res Inst, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | Document URI: | http://hdl.handle.net/1942/2735 | ISSN: | 0026-2714 | e-ISSN: | 1872-941X | ISI #: | 000171384900029 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2002 |
Appears in Collections: | Research publications |
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