Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2737
Title: A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation
Authors: DREESEN, Raf 
CROES, Kristof 
MANCA, Jean 
DE CEUNINCK, Ward 
DE SCHEPPER, Luc 
Pergoot, A
Groeseneken, G
Issue Date: 2001
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Source: MICROELECTRONICS RELIABILITY, 41(3). p. 437-443
Abstract: The hot-carrier degradation of lightly doped drain nMOSFETs is studied in detail. The degradation proceeds in a two-stage mechanism, involving first a series resistance increase and saturation, followed by a carrier mobility reduction. The degradation behaviour of a characteristic MOSFET parameter is modelled over the complete degradation range, from 0.02 up to more than 10%. Furthermore, the introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour, at normal operating conditions. (C) 2001 Elsevier Science Ltd. All rights reserved.
Notes: Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
Document URI: http://hdl.handle.net/1942/2737
ISSN: 0026-2714
e-ISSN: 1872-941X
DOI: 10.1016/S0026-2714(00)00225-0
ISI #: 000167966500012
Category: A1
Type: Journal Contribution
Validations: ecoom 2002
Appears in Collections:Research publications

Show full item record

SCOPUSTM   
Citations

21
checked on Sep 2, 2020

WEB OF SCIENCETM
Citations

22
checked on May 22, 2022

Page view(s)

50
checked on May 23, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.