Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique.

Abstract

By using a new, state-of-the-art measurement technique, the hot-carrier degradation of LDD nMOSFETs is studied. This high-resolution measurement technique, allows the measurement of degradation levels as low as 0.03%. A new model based on Goo et al. [1] has been developed and verified in the full region between 0.03 up to almost 10% for the ageing parameter I-d,I-lin. The introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour at real life operating conditions. (C) 1999 Elsevier Science Ltd. All rights reserved.