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Title: | Modelling of the Hot-Carrier Degradation Behaviour of Submicron nMOSFETs making use of High-Resolution Measurements | Authors: | DREESEN, Raf | Advisors: | DE SCHEPPER, Luc | Issue Date: | 2000 | Publisher: | UHasselt Diepenbeek | Abstract: | This thesis deals with the study of the reliability of one specific type of electronic component, the Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). MOSFETs have been in use since the beginning of the sixties. They have several advantages: The LOCOS (Local Oxidation of Silicon) isolation enables the separation of devices. The structure has superb scaling possibilities . The use of n-type and p-type devices on the same substrate allows building circuits with complementary MOS structures (CMOS), which results in ultra-low power consumption. These advantages have made the MOSFET the basic building block of semiconductor very-large-scale integration (VLSI) and ultra-large-scale integration (ULSI) products, such as memory cells and microprocessors. ... | Document URI: | http://hdl.handle.net/1942/8755 | Category: | T1 | Type: | Theses and Dissertations |
Appears in Collections: | PhD theses Research publications |
Files in This Item:
File | Description | Size | Format | |
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Raf Dreesen.pdf | 14.77 MB | Adobe PDF | View/Open |
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