BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

Results 181-200 of 200 (Search time: 0.007 seconds).

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Issue DateTitleContributor(s)TypeCat.
1812009Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulatorLin, Han-Chung; Wang, Wei-E.; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, MarcJournal ContributionA1
22009A DLTS study of Pt/Al2O3/InxGa1 - xAs CapacitorsSimoen, E.; BRAMMERTZ, Guy; Penaud, J.; Merckling, C.; Lin, H. C.; Wang, W. -E.; MEURIS, MarcProceedings PaperC1
32008Alternative Channel Materials for MOS DevicesHeyns, M; Adelmann, C; BRAMMERTZ, Guy; Brunco, D; Caymax, M; De Jaeger, B; Delabie, A; Eneman, G; Houssa, M; Lin, D; Martens, K; Merckling, C; MEURIS, Marc; Mittard, J; Penaud, J; Pourtois, G; Scarrozza, M; Simoen, E; Sioncke, S; Wang, WEProceedings PaperC1
242008Capacitance-Voltage (CV) Characterization of GaAs-Oxide InterfacesBRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Mercier, D.; Merckling, C.; Penaud, J.; Adelmann, C.; Sioncke, S.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
252008Atomic Layer Deposition of High-kappa Dielectric Layers on Ge and III-V MOS ChannelsDelabie, A.; Alian, A.; Bellenger, F.; BRAMMERTZ, Guy; Brunco, D. P.; Caymax, M.; Conard, T.; Franquet, A.; Houssa, M.; Sioncke, S.; Van Elshocht, S.; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M.; Afanas'ev, V. V.; Stesmans, A.; Heyns, M. M.; MEURIS, MarcProceedings PaperC1
262008Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2Afanas'ev, V. V.; Badylevich, M.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B.Journal ContributionA1
272008Capacitance-voltage characterization of GaAs–Al2O3 interfacesBRAMMERTZ, Guy; Lin, H. -C.; Martens, K.; Mercier, D.; Sioncke, S.; Delabie, A.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M.Journal ContributionA1
282008Structure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructuresMolle, Alessandro; Spiga, Sabina; Andreozzi, Andrea; Fanciulli, Marco; BRAMMERTZ, Guy; MEURIS, MarcJournal ContributionA1
292008GaAs on Ge for CMOSBRAMMERTZ, Guy; Caymax, M.; MEURIS, Marc; Heyns, M.; Mols, Y.; Degroote, S.; Leys, M.Journal ContributionA1
302008On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor SubstratesMartens, Koen; Chui, Chi On; BRAMMERTZ, Guy; De Jaeger, Brice; Kuzum, Duygu; MEURIS, Marc; Heyns, Marc M.; Krishnamohan, Tejas; Saraswat, Krishna; MAES, Herman; Groeseneken, GuidoJournal ContributionA1
312008Capacitance–Voltage Characterization of GaAs–Oxide InterfacesBRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Mercier, D.; Merckling, C.; Penaud, J.; Adelmann, C.; Sioncke, S.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M.Journal ContributionA1
322008Accurate carrier profiling of n-type GaAs junctionsClarysse, T.; BRAMMERTZ, Guy; Vanhaeren, D.; Eyben, P.; Goossens, J.; Clemente, F.; MEURIS, Marc; Vandervorst, W.; Srnanek, R.; Kinder, R.; Li, Zhiqiang; Sciana, B.; Radziewicz, D.Journal ContributionA1
332007Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structuresBRAMMERTZ, Guy; Martens, Koen; Sioncke, Sonja; Delabie, Annelies; Caymax, Matty; MEURIS, Marc; Heyns, MarcJournal ContributionA1
342007Surface recombination velocity in GaAs and In0.15Ga0.85As thin filmsBRAMMERTZ, Guy; Heyns, Marc; MEURIS, Marc; Caymax, Matty; Jiang, Dehuai; Mols, Yves; Degroote, Stefan; Leys, Maarten; Borghs, GustaafJournal ContributionA1
352007Comparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOSBRAMMERTZ, Guy; Heyns, M.; MEURIS, Marc; Caymax, M.; Jiang, D.Journal ContributionA1
362006Key Issues for the Development of a Ge CMOS Device in an Advanced IC CircuitMEURIS, Marc; Martens, K.; De Jaegar, B.; Van Steenbergen, J.; Bonzom, Renaud; Caymax, Matty R.; Houssa, M.; Kaczer, Ben; Leys, Frederik; NELIS, Daniel; Opsomer, Karl; Pourghaderi, A. M.; Satta, A.; Simoen, Eddy R.; Terzieva, Valentina; Souriau, Laurent; Bellenger, F.; BRAMMERTZ, Guy; Nicholas, G.; Scarozza, M.; Huyghebaert, C.; Winderickx, Gillis; Loo, Roger; Clarysse, Trudo; Conard, Thierry; Bender, Hugo; Benedetti, Alessandro; Todi, R.; Delabie, A.; Hellin, David; Van Daele, Benny; Sioncke, Sonja; Mertens, Paul W.; De Meyer, Krtistien; Van Elshocht, Sven; Vandervorst, Wilfried; Zimmerman, Paul; Brunco, David P.; Heyns, Marc M.Proceedings PaperC1
372006How Trace Analytical Techniques Contribute to the Research and Development of Ge and III/V Semiconductor DevicesHellin, David; Rip, Jens; Bonzom, Renaud; NELIS, Daniel; Sioncke, Sonja; BRAMMERTZ, Guy; Caymax, Matty R.; MEURIS, Marc; De Gendt, S.; Vinckier, ChrisProceedings PaperC1
382006Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 PatternBRAMMERTZ, Guy; Caymax, Matty R.; Mols, Yves; Degroote, Stefan; Leys, Maarten; Van Steenbergen, Jan; Winderickx, Gilles; Borghs, Gustaaf; MEURIS, MarcProceedings PaperC1
392006Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substratesBRAMMERTZ, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, MattyJournal ContributionA1
402006Selective epitaxial growth of GaAs on Ge by MOCVDBRAMMERTZ, Guy; Mols, Yves; Degroote, Stefan; Leys, Maarten; Van Steenbergen, Jan; Borghs, Gustaaf; Caymax, MattyJournal ContributionA1
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