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| | Issue Date | Title | Contributor(s) | Type | Cat. |
| 101 | 2010 | Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne; Wang, Wei-E | Proceedings Paper | C1 |
| 322 | 2010 | Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates | Molle, A.; BRAMMERTZ, Guy; Lamagna, L.; Spiga, S.; MEURIS, Marc; Fanciulli, M. | Proceedings Paper | C1 |
| 323 | 2010 | Catalytic forming gas anneal on III-V/Ge MOS systems | Wang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 324 | 2010 | Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 325 | 2010 | Influence of interface traps on high-mobility channel performance | Hellings, Geert; Eneman, Geert; BRAMMERTZ, Guy; Martens, Koen; Mitard, Jerome; Wang, Wei-E; Hoffmann, Thomas; MEURIS, Marc; De Meyer, Kristin | Proceedings Paper | C1 |
| 326 | 2010 | High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmap | Heyns, M.; Bellenger, F.; BRAMMERTZ, Guy; Caymax, M.; De Gendt, S.; De Jaeger, B.; Delabie, A.; Eneman, G.; Groeseneken, G.; Houssa, M.; Leonelli, D.; Lin, D.; Martens, K.; Merckling, C.; MEURIS, Marc; Mitard, J.; Penaud, J.; Pourtois, G.; Scarrozza, M.; Simoen, E.; Van Elshocht, S.; Vandenberghe, W.; Vandooren, A.; Verhulst, A.; Wang, W.-E. | Proceedings Paper | C1 |
| 327 | 2009 | Ge and III/V devices for advanced CMOS | Heyns, Marc; Adelmann, Christoph; BRAMMERTZ, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mittard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-E | Proceedings Paper | C1 |
| 328 | 2009 | Electrical Properties of III-V/Oxide Interfaces | BRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Alian, A.; Merckling, C.; Penaud, J.; Kohen, D.; Wang, W. -E; Sioncke, S.; Delabie, A.; MEURIS, Marc; Cayrnax, M.; Heyns, M. | Proceedings Paper | C1 |
| 329 | 2009 | Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution | Lin, D.; BRAMMERTZ, Guy; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Wang, W. E.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T. | Proceedings Paper | C1 |
| 330 | 2009 | A DLTS study of Pt/Al2O3/InxGa1 - xAs Capacitors | Simoen, E.; BRAMMERTZ, Guy; Penaud, J.; Merckling, C.; Lin, H. C.; Wang, W. -E.; MEURIS, Marc | Proceedings Paper | C1 |
| 331 | 2009 | High-kappa Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOS | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven; Wang, Wei-E | Proceedings Paper | C1 |
| 332 | 2009 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substrates | Sioncke, Sonja; Delabie, Annelies; BRAMMERTZ, Guy; Conard, Thierry; Franquet, Alexis; Caymax, Matty; Urbanzcyk, Adam; Heyns, Marc; MEURIS, Marc; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M. | Journal Contribution | A1 |
| 333 | 2009 | The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces | Lin, H. C.; BRAMMERTZ, Guy; Martens, Koen; de Valicourt, Guilhem; Negre, Laurent; Wang, Wei-E; Tsai, Wilman; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 334 | 2009 | Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS | Merckling, C.; Penaud, J.; Kohen, D.; Bellenger, F.; Alian, A.; BRAMMERTZ, Guy; El-Kazzi, M.; Houssa, M.; Dekoster, J.; Caymax, M.; MEURIS, Marc; Heyns, M. M. | Journal Contribution | A1 |
| 335 | 2009 | On the interface state density at In0.53Ga0.47As/oxide interfaces | BRAMMERTZ, Guy; Lin, H-C.; Caymax, M.; MEURIS, Marc; Heyns, M.; Passlack, M. | Journal Contribution | A1 |
| 336 | 2009 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper) | Caymax, Matty; BRAMMERTZ, Guy; Delabie, Annelies; Sioncke, Sonja; Lin, Dennis; Scarrozza, Marco; Pourtois, Geoffrey; Wang, Wei-E; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 337 | 2009 | Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates | Molle, Alessandro; BRAMMERTZ, Guy; Lamagna, Luca; Fanciulli, Marco; MEURIS, Marc; Spiga, Sabina | Journal Contribution | A1 |
| 338 | 2009 | Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator | Lin, Han-Chung; Wang, Wei-E.; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 339 | 2008 | Alternative Channel Materials for MOS Devices | Heyns, M; Adelmann, C; BRAMMERTZ, Guy; Brunco, D; Caymax, M; De Jaeger, B; Delabie, A; Eneman, G; Houssa, M; Lin, D; Martens, K; Merckling, C; MEURIS, Marc; Mittard, J; Penaud, J; Pourtois, G; Scarrozza, M; Simoen, E; Sioncke, S; Wang, WE | Proceedings Paper | C1 |
| 340 | 2008 | Capacitance-voltage characterization of GaAs–Al2O3 interfaces | BRAMMERTZ, Guy; Lin, H. -C.; Martens, K.; Mercier, D.; Sioncke, S.; Delabie, A.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M. | Journal Contribution | A1 |
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