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| | Issue Date | Title | Contributor(s) | Type | Cat. |
| 101 | 2012 | InGaAs MOS Transistors Fabricated through a Digital-Etch Gate-Recess Process and the Influence of Forming Gas Anneal on Their Electrical Behavior | Alian, Alireza; Merckling, Clement; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, Marc; De Meyer, Kristin | Journal Contribution | A1 |
| 102 | 2011 | Advancing CMOS beyond the Si roadmap with Ge and III/V devices | Heyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Chang, Y. C.; Chu, L. K.; De Jaeger, B.; Eneman, G.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Hoffmann, T. Y.; Houssa, M.; Huyghebaert, C.; Leonelli, D.; Lin, D.; Loo, R.; Magnus, W.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Orzali, T.; Rooyackers, R.; Sioncke, S.; Soree, B.; Sun, X.; Vandooren, A.; Verhulst, A. S.; Vincent, B.; Waldron, N.; Wang, G.; Wang, W. E.; Witters, L. | Proceedings Paper | C1 |
| 103 | 2011 | Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment | Waldron, Niamh; Ngoc Duy Nguyen; Lin, Dennis; BRAMMERTZ, Guy; Vincent, Benjamin; Firrincieli, Andrea; Winderick, Gillis; Sioncke, Sonja; de Jaeger, Brice; Wang, Gang; Mitard, Jerome; Wang, Wei-E; Heyns, Marc; Caymax, Matty; MEURIS, Marc; Absil, Philippe; Hoffman, Thomas Y. | Proceedings Paper | C1 |
| 104 | 2011 | A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to In0.53Ga0.47As and InP Capacitors | BRAMMERTZ, Guy; Alian, Alireza; Lin, Dennis Han-Chung; MEURIS, Marc; Caymax, Matty; Wang, W. -E. | Journal Contribution | A1 |
| 105 | 2011 | Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts | Vincent, B.; Firrincieli, A.; Wang, W. -E.; Waldron, N.; Franquet, A.; Douhard, B.; Vandervorst, W.; Clarysse, T.; BRAMMERTZ, Guy; Loo, R.; Dekoster, J.; MEURIS, Marc; Caymax, M. | Journal Contribution | A1 |
| 106 | 2011 | Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium | Sioncke, S.; Lin, H. C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Muller, M.; Kolbe, M.; Beckhoff, B.; Caymax, M. | Journal Contribution | A1 |
| 107 | 2011 | Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces | Alian, Alireza; BRAMMERTZ, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, H. C.; Caymax, Matty; MEURIS, Marc; De Meyer, Kristin; Heyns, Marc | Journal Contribution | A1 |
| 108 | 2011 | Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation | Merckling, C.; Chang, Y. C.; Lu, C.Y.; Penaud, J.; BRAMMERTZ, Guy; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; MEURIS, Marc; Heyns, M.; Caymax, M. | Journal Contribution | A1 |
| 109 | 2011 | Growth of high quality InP layers in STI trenches on miscut Si (001) substrates | Wang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 110 | 2011 | Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions | Allan, A.; BRAMMERTZ, Guy; Waldron, N.; Merckling, C.; Hellings, G.; Lin, H. C.; Wang, W. E.; MEURIS, Marc; Simoen, E.; De Meyer, K.; Heyns, M. | Journal Contribution | A1 |
| 11 | 2011 | Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface | Fusi, M.; Lamagna, L.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A. | Journal Contribution | A1 |
| 12 | 2011 | H2S molecular beam passivation of Ge(001) | Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; BRAMMERTZ, Guy; Hong, M.; Kwo, J.; MEURIS, Marc; Dekoster, J.; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 13 | 2011 | Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates | Lamagna, L.; Fusi, M.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A. | Journal Contribution | A1 |
| 14 | 2010 | Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 15 | 2010 | Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates | Molle, A.; BRAMMERTZ, Guy; Lamagna, L.; Spiga, S.; MEURIS, Marc; Fanciulli, M. | Proceedings Paper | C1 |
| 16 | 2010 | Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) Substrates | Wang, G.; Nguyen, N. D.; Leys, M. R.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Proceedings Paper | C1 |
| 17 | 2010 | Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications | Nguyen, N. D.; Wang, G.; BRAMMERTZ, Guy; Leys, M.; Waldron, N.; WINDERICKX, Jori; Lismont, K.; Dekoster, J.; Loo, R.; MEURIS, Marc; Degroote, S.; Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M.; Caymax, M. | Proceedings Paper | C1 |
| 18 | 2010 | High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmap | Heyns, M.; Bellenger, F.; BRAMMERTZ, Guy; Caymax, M.; De Gendt, S.; De Jaeger, B.; Delabie, A.; Eneman, G.; Groeseneken, G.; Houssa, M.; Leonelli, D.; Lin, D.; Martens, K.; Merckling, C.; MEURIS, Marc; Mitard, J.; Penaud, J.; Pourtois, G.; Scarrozza, M.; Simoen, E.; Van Elshocht, S.; Vandenberghe, W.; Vandooren, A.; Verhulst, A.; Wang, W.-E. | Proceedings Paper | C1 |
| 19 | 2010 | ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation | Sioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D.; Tallarida, M. | Proceedings Paper | C1 |
| 20 | 2010 | Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne; Wang, Wei-E | Proceedings Paper | C1 |
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