BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

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Author:  Heyns, M.

Results 1-20 of 23 (Search time: 0.005 seconds).

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Issue DateTitleContributor(s)TypeCat.
12012Challenges for introducing Ge and III/V devices into CMOS technologiesHeyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Eneman, G.; Franco, J.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Houssa, M.; Kaczer, B.; LIN, Dan; Loo, R.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Sioncke, S.; Vandervorst, W.; Vincent, B.; Waldron, N.; Witters, L.Proceedings PaperC1
22011Advancing CMOS beyond the Si roadmap with Ge and III/V devicesHeyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Chang, Y. C.; Chu, L. K.; De Jaeger, B.; Eneman, G.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Hoffmann, T. Y.; Houssa, M.; Huyghebaert, C.; Leonelli, D.; Lin, D.; Loo, R.; Magnus, W.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Orzali, T.; Rooyackers, R.; Sioncke, S.; Soree, B.; Sun, X.; Vandooren, A.; Verhulst, A. S.; Vincent, B.; Waldron, N.; Wang, G.; Wang, W. E.; Witters, L.Proceedings PaperC1
32011Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated GermaniumSioncke, S.; Lin, H. C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Muller, M.; Kolbe, M.; Beckhoff, B.; Caymax, M.Journal ContributionA1
42011Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C.Y.; Penaud, J.; BRAMMERTZ, Guy; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; MEURIS, Marc; Heyns, M.; Caymax, M.Journal ContributionA1
52011Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditionsAllan, A.; BRAMMERTZ, Guy; Waldron, N.; Merckling, C.; Hellings, G.; Lin, H. C.; Wang, W. E.; MEURIS, Marc; Simoen, E.; De Meyer, K.; Heyns, M.Journal ContributionA1
62011GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxideMerckling, C.; Sun, X.; Alian, A.; BRAMMERTZ, Guy; Afanas'ev, V. V.; Hoffmann, T. Y.; Heyns, M.; Caymax, M.; Dekoster, J.Journal ContributionA1
72010Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealingChang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
82010High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmapHeyns, M.; Bellenger, F.; BRAMMERTZ, Guy; Caymax, M.; De Gendt, S.; De Jaeger, B.; Delabie, A.; Eneman, G.; Groeseneken, G.; Houssa, M.; Leonelli, D.; Lin, D.; Martens, K.; Merckling, C.; MEURIS, Marc; Mitard, J.; Penaud, J.; Pourtois, G.; Scarrozza, M.; Simoen, E.; Van Elshocht, S.; Vandenberghe, W.; Vandooren, A.; Verhulst, A.; Wang, W.-E.Proceedings PaperC1
92010Catalytic forming gas anneal on III-V/Ge MOS systemsWang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
102010ALD on High Mobility Channels: Engineering the Proper Gate Stack PassivationSioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D.; Tallarida, M.Proceedings PaperC1
112010Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOSLin, D.; Waldron, N.; BRAMMERTZ, Guy; MARTENS, Klara; Wang, W. -E; Sioncke, S.; Delabie, A.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T.Proceedings PaperC1
122009Electrical Properties of III-V/Oxide InterfacesBRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Alian, A.; Merckling, C.; Penaud, J.; Kohen, D.; Wang, W. -E; Sioncke, S.; Delabie, A.; MEURIS, Marc; Cayrnax, M.; Heyns, M.Proceedings PaperC1
132009Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solutionLin, D.; BRAMMERTZ, Guy; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Wang, W. E.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T.Proceedings PaperC1
142009Controlled III/V Nanowire Growth by Selective-Area Vapour Phase EpitaxyCantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.Proceedings PaperC1
152009Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)Hurley, P. K.; O'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; MacHale, J.; Quinn, A. J.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Sonnet, A. M.; Galatage, R. V.; Jivani, M. N.; Vogel, E. M.; Wallace, R. M.; Pemble, M. E.Proceedings PaperC1
162009On the interface state density at In0.53Ga0.47As/oxide interfacesBRAMMERTZ, Guy; Lin, H-C.; Caymax, M.; MEURIS, Marc; Heyns, M.; Passlack, M.Journal ContributionA1
172009Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methodsO'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; Pemble, M. E.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Hurley, P. K.Journal ContributionA1
182009Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase EpitaxyCantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.Journal ContributionA1
192008Capacitance-Voltage (CV) Characterization of GaAs-Oxide InterfacesBRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Mercier, D.; Merckling, C.; Penaud, J.; Adelmann, C.; Sioncke, S.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
202008Capacitance-voltage characterization of GaAs–Al2O3 interfacesBRAMMERTZ, Guy; Lin, H. -C.; Martens, K.; Mercier, D.; Sioncke, S.; Delabie, A.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M.Journal ContributionA1
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