BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

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Date Issued:  [2006 TO 2009]

Results 1-20 of 38 (Search time: 0.005 seconds).

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Issue DateTitleContributor(s)TypeCat.
12009Electrical Properties of III-V/Oxide InterfacesBRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Alian, A.; Merckling, C.; Penaud, J.; Kohen, D.; Wang, W. -E; Sioncke, S.; Delabie, A.; MEURIS, Marc; Cayrnax, M.; Heyns, M.Proceedings PaperC1
22009Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solutionLin, D.; BRAMMERTZ, Guy; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Wang, W. E.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T.Proceedings PaperC1
32009Controlled III/V Nanowire Growth by Selective-Area Vapour Phase EpitaxyCantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.Proceedings PaperC1
42009High-kappa Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOSHeyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven; Wang, Wei-EProceedings PaperC1
52009Epitaxial Ge on Standard STI Patterned Si Wafers: High Quality Virtual Substrates for Ge pMOS and III/V nMOSLoo, R.; Wang, G.; Souriau, L.; Lin, J. C.; Takeuchi, S.; BRAMMERTZ, Guy; Caymax, M.Proceedings PaperC1
62009Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)Hurley, P. K.; O'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; MacHale, J.; Quinn, A. J.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Sonnet, A. M.; Galatage, R. V.; Jivani, M. N.; Vogel, E. M.; Wallace, R. M.; Pemble, M. E.Proceedings PaperC1
72009Ge and III/V devices for advanced CMOSHeyns, Marc; Adelmann, Christoph; BRAMMERTZ, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mittard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-EProceedings PaperC1
82009On the interface state density at In0.53Ga0.47As/oxide interfacesBRAMMERTZ, Guy; Lin, H-C.; Caymax, M.; MEURIS, Marc; Heyns, M.; Passlack, M.Journal ContributionA1
92009Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2Afanas'ev, V. V.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B.Journal ContributionA1
102009The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfacesLin, H. C.; BRAMMERTZ, Guy; Martens, Koen; de Valicourt, Guilhem; Negre, Laurent; Wang, Wei-E; Tsai, Wilman; MEURIS, Marc; Heyns, MarcJournal ContributionA1
112009Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substratesMolle, Alessandro; BRAMMERTZ, Guy; Lamagna, Luca; Fanciulli, Marco; MEURIS, Marc; Spiga, SabinaJournal ContributionA1
122009Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methodsO'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; Pemble, M. E.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Hurley, P. K.Journal ContributionA1
132009Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase EpitaxyCantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.Journal ContributionA1
142009Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs SubstratesSioncke, Sonja; Delabie, Annelies; BRAMMERTZ, Guy; Conard, Thierry; Franquet, Alexis; Caymax, Matty; Urbanzcyk, Adam; Heyns, Marc; MEURIS, Marc; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M.Journal ContributionA1
152009Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)Caymax, Matty; BRAMMERTZ, Guy; Delabie, Annelies; Sioncke, Sonja; Lin, Dennis; Scarrozza, Marco; Pourtois, Geoffrey; Wang, Wei-E; MEURIS, Marc; Heyns, MarcJournal ContributionA1
162009Optical characterization of thin epitaxial GaAs films on Ge substratesWu, J. D.; Huang, Y. S.; BRAMMERTZ, Guy; Tiong, K. K.Journal ContributionA1
172009Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulatorLin, Han-Chung; Wang, Wei-E.; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, MarcJournal ContributionA1
182009Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2Afanas'ev, V. V.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B.Journal ContributionA1
192009Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOSMerckling, C.; Penaud, J.; Kohen, D.; Bellenger, F.; Alian, A.; BRAMMERTZ, Guy; El-Kazzi, M.; Houssa, M.; Dekoster, J.; Caymax, M.; MEURIS, Marc; Heyns, M. M.Journal ContributionA1
202009A DLTS study of Pt/Al2O3/InxGa1 - xAs CapacitorsSimoen, E.; BRAMMERTZ, Guy; Penaud, J.; Merckling, C.; Lin, H. C.; Wang, W. -E.; MEURIS, MarcProceedings PaperC1
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