BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

Results 161-180 of 193 (Search time: 0.011 seconds).

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Issue DateTitleContributor(s)TypeCat.
1612009Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)Hurley, P. K.; O'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; MacHale, J.; Quinn, A. J.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Sonnet, A. M.; Galatage, R. V.; Jivani, M. N.; Vogel, E. M.; Wallace, R. M.; Pemble, M. E.Proceedings PaperC1
1622009Ge and III/V devices for advanced CMOSHeyns, Marc; Adelmann, Christoph; BRAMMERTZ, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mittard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-EProceedings PaperC1
1632009On the interface state density at In0.53Ga0.47As/oxide interfacesBRAMMERTZ, Guy; Lin, H-C.; Caymax, M.; MEURIS, Marc; Heyns, M.; Passlack, M.Journal ContributionA1
1642009Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2Afanas'ev, V. V.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B.Journal ContributionA1
1652009The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfacesLin, H. C.; BRAMMERTZ, Guy; Martens, Koen; de Valicourt, Guilhem; Negre, Laurent; Wang, Wei-E; Tsai, Wilman; MEURIS, Marc; Heyns, MarcJournal ContributionA1
1662009Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substratesMolle, Alessandro; BRAMMERTZ, Guy; Lamagna, Luca; Fanciulli, Marco; MEURIS, Marc; Spiga, SabinaJournal ContributionA1
1672009Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methodsO'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; Pemble, M. E.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Hurley, P. K.Journal ContributionA1
1682009Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase EpitaxyCantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.Journal ContributionA1
1692009Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs SubstratesSioncke, Sonja; Delabie, Annelies; BRAMMERTZ, Guy; Conard, Thierry; Franquet, Alexis; Caymax, Matty; Urbanzcyk, Adam; Heyns, Marc; MEURIS, Marc; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M.Journal ContributionA1
1702009Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)Caymax, Matty; BRAMMERTZ, Guy; Delabie, Annelies; Sioncke, Sonja; Lin, Dennis; Scarrozza, Marco; Pourtois, Geoffrey; Wang, Wei-E; MEURIS, Marc; Heyns, MarcJournal ContributionA1
1712009Optical characterization of thin epitaxial GaAs films on Ge substratesWu, J. D.; Huang, Y. S.; BRAMMERTZ, Guy; Tiong, K. K.Journal ContributionA1
1722009Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulatorLin, Han-Chung; Wang, Wei-E.; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, MarcJournal ContributionA1
1732009Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2Afanas'ev, V. V.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B.Journal ContributionA1
1742009Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOSMerckling, C.; Penaud, J.; Kohen, D.; Bellenger, F.; Alian, A.; BRAMMERTZ, Guy; El-Kazzi, M.; Houssa, M.; Dekoster, J.; Caymax, M.; MEURIS, Marc; Heyns, M. M.Journal ContributionA1
1752009A DLTS study of Pt/Al2O3/InxGa1 - xAs CapacitorsSimoen, E.; BRAMMERTZ, Guy; Penaud, J.; Merckling, C.; Lin, H. C.; Wang, W. -E.; MEURIS, MarcProceedings PaperC1
1762008Alternative Channel Materials for MOS DevicesHeyns, M; Adelmann, C; BRAMMERTZ, Guy; Brunco, D; Caymax, M; De Jaeger, B; Delabie, A; Eneman, G; Houssa, M; Lin, D; Martens, K; Merckling, C; MEURIS, Marc; Mittard, J; Penaud, J; Pourtois, G; Scarrozza, M; Simoen, E; Sioncke, S; Wang, WEProceedings PaperC1
1772008Capacitance-Voltage (CV) Characterization of GaAs-Oxide InterfacesBRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Mercier, D.; Merckling, C.; Penaud, J.; Adelmann, C.; Sioncke, S.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
1782008Atomic Layer Deposition of High-kappa Dielectric Layers on Ge and III-V MOS ChannelsDelabie, A.; Alian, A.; Bellenger, F.; BRAMMERTZ, Guy; Brunco, D. P.; Caymax, M.; Conard, T.; Franquet, A.; Houssa, M.; Sioncke, S.; Van Elshocht, S.; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M.; Afanas'ev, V. V.; Stesmans, A.; Heyns, M. M.; MEURIS, MarcProceedings PaperC1
1792008Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2Afanas'ev, V. V.; Badylevich, M.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B.Journal ContributionA1
1802008Capacitance-voltage characterization of GaAs–Al2O3 interfacesBRAMMERTZ, Guy; Lin, H. -C.; Martens, K.; Mercier, D.; Sioncke, S.; Delabie, A.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M.Journal ContributionA1
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