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| | Issue Date | Title | Contributor(s) | Type | Cat. |
| 141 | 2010 | Catalytic forming gas anneal on III-V/Ge MOS systems | Wang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 142 | 2010 | Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates | Molle, A.; BRAMMERTZ, Guy; Lamagna, L.; Spiga, S.; MEURIS, Marc; Fanciulli, M. | Proceedings Paper | C1 |
| 143 | 2010 | Influence of interface traps on high-mobility channel performance | Hellings, Geert; Eneman, Geert; BRAMMERTZ, Guy; Martens, Koen; Mitard, Jerome; Wang, Wei-E; Hoffmann, Thomas; MEURIS, Marc; De Meyer, Kristin | Proceedings Paper | C1 |
| 144 | 2010 | Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications | Nguyen, N. D.; Wang, G.; BRAMMERTZ, Guy; Leys, M.; Waldron, N.; WINDERICKX, Jori; Lismont, K.; Dekoster, J.; Loo, R.; MEURIS, Marc; Degroote, S.; Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M.; Caymax, M. | Proceedings Paper | C1 |
| 145 | 2010 | ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation | Sioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D.; Tallarida, M. | Proceedings Paper | C1 |
| 146 | 2010 | Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS | Lin, D.; Waldron, N.; BRAMMERTZ, Guy; MARTENS, Klara; Wang, W. -E; Sioncke, S.; Delabie, A.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T. | Proceedings Paper | C1 |
| 147 | 2010 | Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne; Wang, Wei-E | Proceedings Paper | C1 |
| 148 | 2010 | Electrical characterization of InGaAs ultra-shallow junctions | Petersen, Dirch H.; Hansen, Ole; Boggild, Peter; Lin, Rong; Nielsen, Peter F.; Lin, Dennis; Adelmann, Christoph; Alian, Alireza; Merckling, Clement; Penaud, Julien; BRAMMERTZ, Guy; Goossens, Jozefien; Vandervorst, Wilfried; Clarysse, Trudo | Journal Contribution | A1 |
| 149 | 2010 | Selective area growth of high quality InP on Si (001) substrates | Wang, G.; Leys, M. R.; Loo, R.; Richard, O.; Bender, H.; Waldron, N.; BRAMMERTZ, Guy; Dekoster, J.; Wang, W.; Seefeldt, M.; Caymax, M.; Heyns, M. M. | Journal Contribution | A1 |
| 150 | 2010 | Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates | Wang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 151 | 2010 | High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning | Loo, R.; Wang, G.; Souriau, L.; Lin, J. C.; Takeuchi, S.; BRAMMERTZ, Guy; Caymax, M. | Journal Contribution | A1 |
| 152 | 2010 | Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks | Molle, Alessandro; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; BRAMMERTZ, Guy; MEURIS, Marc | Journal Contribution | A1 |
| 153 | 2010 | Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane | Vincent, B.; Loo, R.; Vandervorst, W.; BRAMMERTZ, Guy; Caymax, M. | Journal Contribution | A1 |
| 154 | 2010 | Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications | Passlack, Matthias; Droopad, Ravi; BRAMMERTZ, Guy | Journal Contribution | A1 |
| 155 | 2010 | Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures | Benbakhti, B.; Ayubi-Moak, J. S.; Kalna, K.; Lin, D.; Hellings, G.; BRAMMERTZ, Guy; De Meyer, K.; Thayne, I.; Asenov, A. | Journal Contribution | A1 |
| 16 | 2009 | Electrical Properties of III-V/Oxide Interfaces | BRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Alian, A.; Merckling, C.; Penaud, J.; Kohen, D.; Wang, W. -E; Sioncke, S.; Delabie, A.; MEURIS, Marc; Cayrnax, M.; Heyns, M. | Proceedings Paper | C1 |
| 17 | 2009 | Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution | Lin, D.; BRAMMERTZ, Guy; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Wang, W. E.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T. | Proceedings Paper | C1 |
| 18 | 2009 | Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy | Cantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S. | Proceedings Paper | C1 |
| 19 | 2009 | High-kappa Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOS | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven; Wang, Wei-E | Proceedings Paper | C1 |
| 20 | 2009 | Epitaxial Ge on Standard STI Patterned Si Wafers: High Quality Virtual Substrates for Ge pMOS and III/V nMOS | Loo, R.; Wang, G.; Souriau, L.; Lin, J. C.; Takeuchi, S.; BRAMMERTZ, Guy; Caymax, M. | Proceedings Paper | C1 |
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