BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

Results 121-140 of 193 (Search time: 0.011 seconds).

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Issue DateTitleContributor(s)TypeCat.
1212011A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to In0.53Ga0.47As and InP CapacitorsBRAMMERTZ, Guy; Alian, Alireza; Lin, Dennis Han-Chung; MEURIS, Marc; Caymax, Matty; Wang, W. -E.Journal ContributionA1
1222011Selective Area Growth of InP and Defect Elimination on Si (001) SubstratesWang, Gang; Leys, Maarten; Loo, Roger; Richard, Olivier; Bender, Hugo; BRAMMERTZ, Guy; Waldron, Niamh; Wang, Wei-E; Dekoster, Johan; Caymax, Matty; Seefeldt, Marc; Heyns, MarcJournal ContributionA1
1232011Ge Chemical Vapor Deposition on GaAs for Low Resistivity ContactsVincent, B.; Firrincieli, A.; Wang, W. -E.; Waldron, N.; Franquet, A.; Douhard, B.; Vandervorst, W.; Clarysse, T.; BRAMMERTZ, Guy; Loo, R.; Dekoster, J.; MEURIS, Marc; Caymax, M.Journal ContributionA1
1242011Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated GermaniumSioncke, S.; Lin, H. C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Muller, M.; Kolbe, M.; Beckhoff, B.; Caymax, M.Journal ContributionA1
1252011Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C.Y.; Penaud, J.; BRAMMERTZ, Guy; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; MEURIS, Marc; Heyns, M.; Caymax, M.Journal ContributionA1
1262011Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interfaceFusi, M.; Lamagna, L.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A.Journal ContributionA1
1272011Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditionsAllan, A.; BRAMMERTZ, Guy; Waldron, N.; Merckling, C.; Hellings, G.; Lin, H. C.; Wang, W. E.; MEURIS, Marc; Simoen, E.; De Meyer, K.; Heyns, M.Journal ContributionA1
1282011H2S molecular beam passivation of Ge(001)Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; BRAMMERTZ, Guy; Hong, M.; Kwo, J.; MEURIS, Marc; Dekoster, J.; Heyns, M. M.; Caymax, M.Journal ContributionA1
1292011S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursorSioncke, S.; Lin, H. C.; Nyns, L.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Rip, J.; Struyf, H.; De Gendt, S.; Mueller, M.; Beckhoff, B.; Caymax, M.Journal ContributionA1
1302011Growth of high quality InP layers in STI trenches on miscut Si (001) substratesWang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Journal ContributionA1
1312011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; BRAMMERTZ, Guy; Chang, E. Y.; Lu, C. Y.; Kuo, C. I.; Nguyen, H. Q.; Lin, Y. C.; Tran, B. T.; Wong, Y. Y.; Kakushima, K.; Iwai, H.Journal ContributionA1
1322011Improved Performance of In0.53Ga0.47As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer DepositionMolle, Alessandro; Lamagna, Luca; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco; Merckling, Clement; BRAMMERTZ, Guy; Caymax, MattyJournal ContributionA1
1332011GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxideMerckling, C.; Sun, X.; Alian, A.; BRAMMERTZ, Guy; Afanas'ev, V. V.; Hoffmann, T. Y.; Heyns, M.; Caymax, M.; Dekoster, J.Journal ContributionA1
1342011Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substratesLamagna, L.; Fusi, M.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A.Journal ContributionA1
1352011Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materialsMolle, Alessandro; BRAMMERTZ, Guy; Dimoulas, Athanasios; Marchiori, ChiaraJournal ContributionA2
1362011Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPECantoro, M.; Wang, G.; Lin, H. C.; Klekachev, A. V.; Richard, O.; Bender, H.; Kim, T. -G.; Clemente, F.; Adelmann, C.; van der Veen, M. H.; BRAMMERTZ, Guy; Degroote, S.; Leys, M.; Caymax, M.; Heyns, M. M.; De Gendt, S.Journal ContributionA1
1372011Interface and Border Traps in Ge-Based Gate StacksNyns, L.; LIN, Dan; BRAMMERTZ, Guy; Bellenger, F.; Shi, X.; Sioncke, S.; Van Elshocht, S.; Caymax, M.Proceedings PaperC1
1382010Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) SubstratesWang, G.; Nguyen, N. D.; Leys, M. R.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Proceedings PaperC1
1392010Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealingChang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
1402010High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmapHeyns, M.; Bellenger, F.; BRAMMERTZ, Guy; Caymax, M.; De Gendt, S.; De Jaeger, B.; Delabie, A.; Eneman, G.; Groeseneken, G.; Houssa, M.; Leonelli, D.; Lin, D.; Martens, K.; Merckling, C.; MEURIS, Marc; Mitard, J.; Penaud, J.; Pourtois, G.; Scarrozza, M.; Simoen, E.; Van Elshocht, S.; Vandenberghe, W.; Vandooren, A.; Verhulst, A.; Wang, W.-E.Proceedings PaperC1
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