BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

Results 141-160 of 200 (Search time: 0.007 seconds).

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Issue DateTitleContributor(s)TypeCat.
1412011Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric LayersMolle, A.; Baldovino, S.; Lamagna, L.; Spiga, S.; Lamperti, A.; Fanciulli, M.; Tsoutsou, D.; Golias, E.; Dimoulas, A.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M.Proceedings PaperC1
422011Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated GermaniumSioncke, S.; Lin, H. C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Muller, M.; Kolbe, M.; Beckhoff, B.; Caymax, M.Journal ContributionA1
432011Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPECantoro, M.; Wang, G.; Lin, H. C.; Klekachev, A. V.; Richard, O.; Bender, H.; Kim, T. -G.; Clemente, F.; Adelmann, C.; van der Veen, M. H.; BRAMMERTZ, Guy; Degroote, S.; Leys, M.; Caymax, M.; Heyns, M. M.; De Gendt, S.Journal ContributionA1
442011Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices?BRAMMERTZ, Guy; Alian, A.; Lin, H. C.; Nyns, L.; Sioncke, S.; Merckling, C.; Wang, W. -E; Caymax, M.; Hoffmann, T. Y.Proceedings PaperC1
52010Impact of interface state trap density on the performance characteristics of different III–V MOSFET architecturesBenbakhti, B.; Ayubi-Moak, J. S.; Kalna, K.; Lin, D.; Hellings, G.; BRAMMERTZ, Guy; De Meyer, K.; Thayne, I.; Asenov, A.Journal ContributionA1
62010Selective area growth of high quality InP on Si (001) substratesWang, G.; Leys, M. R.; Loo, R.; Richard, O.; Bender, H.; Waldron, N.; BRAMMERTZ, Guy; Dekoster, J.; Wang, W.; Seefeldt, M.; Caymax, M.; Heyns, M. M.Journal ContributionA1
72010Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET ApplicationsPasslack, Matthias; Droopad, Ravi; BRAMMERTZ, GuyJournal ContributionA1
82010Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) SubstratesWang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Journal ContributionA1
92010Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOSLin, D.; Waldron, N.; BRAMMERTZ, Guy; MARTENS, Klara; Wang, W. -E; Sioncke, S.; Delabie, A.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T.Proceedings PaperC1
102010Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic ApplicationsNguyen, N. D.; Wang, G.; BRAMMERTZ, Guy; Leys, M.; Waldron, N.; WINDERICKX, Jori; Lismont, K.; Dekoster, J.; Loo, R.; MEURIS, Marc; Degroote, S.; Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M.; Caymax, M.Proceedings PaperC1
112010Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) SubstratesWang, G.; Nguyen, N. D.; Leys, M. R.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Proceedings PaperC1
122010Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacksMolle, Alessandro; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; BRAMMERTZ, Guy; MEURIS, MarcJournal ContributionA1
132010ALD on High Mobility Channels: Engineering the Proper Gate Stack PassivationSioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D.; Tallarida, M.Proceedings PaperC1
142010Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devicesHeyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne; Wang, Wei-EProceedings PaperC1
152010Electrical characterization of InGaAs ultra-shallow junctionsPetersen, Dirch H.; Hansen, Ole; Boggild, Peter; Lin, Rong; Nielsen, Peter F.; Lin, Dennis; Adelmann, Christoph; Alian, Alireza; Merckling, Clement; Penaud, Julien; BRAMMERTZ, Guy; Goossens, Jozefien; Vandervorst, Wilfried; Clarysse, TrudoJournal ContributionA1
162010Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilaneVincent, B.; Loo, R.; Vandervorst, W.; BRAMMERTZ, Guy; Caymax, M.Journal ContributionA1
172010High Quality Ge Virtual Substrates on Si Wafers with Standard STI PatterningLoo, R.; Wang, G.; Souriau, L.; Lin, J. C.; Takeuchi, S.; BRAMMERTZ, Guy; Caymax, M.Journal ContributionA1
182010Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substratesMolle, A.; BRAMMERTZ, Guy; Lamagna, L.; Spiga, S.; MEURIS, Marc; Fanciulli, M.Proceedings PaperC1
192010Catalytic forming gas anneal on III-V/Ge MOS systemsWang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
202010Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealingChang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
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