BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

Results 141-160 of 200 (Search time: 0.035 seconds).

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Issue DateTitleContributor(s)TypeCat.
1412011Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substratesLamagna, L.; Fusi, M.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A.Journal ContributionA1
1422011A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to In0.53Ga0.47As and InP CapacitorsBRAMMERTZ, Guy; Alian, Alireza; Lin, Dennis Han-Chung; MEURIS, Marc; Caymax, Matty; Wang, W. -E.Journal ContributionA1
1432011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; BRAMMERTZ, Guy; Chang, E. Y.; Lu, C. Y.; Kuo, C. I.; Nguyen, H. Q.; Lin, Y. C.; Tran, B. T.; Wong, Y. Y.; Kakushima, K.; Iwai, H.Journal ContributionA1
1442011GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxideMerckling, C.; Sun, X.; Alian, A.; BRAMMERTZ, Guy; Afanas'ev, V. V.; Hoffmann, T. Y.; Heyns, M.; Caymax, M.; Dekoster, J.Journal ContributionA1
1452010Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) SubstratesWang, G.; Nguyen, N. D.; Leys, M. R.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Proceedings PaperC1
1462010Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacksMolle, Alessandro; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; BRAMMERTZ, Guy; MEURIS, MarcJournal ContributionA1
1472010ALD on High Mobility Channels: Engineering the Proper Gate Stack PassivationSioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D.; Tallarida, M.Proceedings PaperC1
1482010Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devicesHeyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne; Wang, Wei-EProceedings PaperC1
1492010Electrical characterization of InGaAs ultra-shallow junctionsPetersen, Dirch H.; Hansen, Ole; Boggild, Peter; Lin, Rong; Nielsen, Peter F.; Lin, Dennis; Adelmann, Christoph; Alian, Alireza; Merckling, Clement; Penaud, Julien; BRAMMERTZ, Guy; Goossens, Jozefien; Vandervorst, Wilfried; Clarysse, TrudoJournal ContributionA1
1502010Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilaneVincent, B.; Loo, R.; Vandervorst, W.; BRAMMERTZ, Guy; Caymax, M.Journal ContributionA1
1512010High Quality Ge Virtual Substrates on Si Wafers with Standard STI PatterningLoo, R.; Wang, G.; Souriau, L.; Lin, J. C.; Takeuchi, S.; BRAMMERTZ, Guy; Caymax, M.Journal ContributionA1
1522010Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substratesMolle, A.; BRAMMERTZ, Guy; Lamagna, L.; Spiga, S.; MEURIS, Marc; Fanciulli, M.Proceedings PaperC1
1532010Catalytic forming gas anneal on III-V/Ge MOS systemsWang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
1542010Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealingChang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
1552010Influence of interface traps on high-mobility channel performanceHellings, Geert; Eneman, Geert; BRAMMERTZ, Guy; Martens, Koen; Mitard, Jerome; Wang, Wei-E; Hoffmann, Thomas; MEURIS, Marc; De Meyer, KristinProceedings PaperC1
1562010High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmapHeyns, M.; Bellenger, F.; BRAMMERTZ, Guy; Caymax, M.; De Gendt, S.; De Jaeger, B.; Delabie, A.; Eneman, G.; Groeseneken, G.; Houssa, M.; Leonelli, D.; Lin, D.; Martens, K.; Merckling, C.; MEURIS, Marc; Mitard, J.; Penaud, J.; Pourtois, G.; Scarrozza, M.; Simoen, E.; Van Elshocht, S.; Vandenberghe, W.; Vandooren, A.; Verhulst, A.; Wang, W.-E.Proceedings PaperC1
1572010Impact of interface state trap density on the performance characteristics of different III–V MOSFET architecturesBenbakhti, B.; Ayubi-Moak, J. S.; Kalna, K.; Lin, D.; Hellings, G.; BRAMMERTZ, Guy; De Meyer, K.; Thayne, I.; Asenov, A.Journal ContributionA1
1582010Selective area growth of high quality InP on Si (001) substratesWang, G.; Leys, M. R.; Loo, R.; Richard, O.; Bender, H.; Waldron, N.; BRAMMERTZ, Guy; Dekoster, J.; Wang, W.; Seefeldt, M.; Caymax, M.; Heyns, M. M.Journal ContributionA1
1592010Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET ApplicationsPasslack, Matthias; Droopad, Ravi; BRAMMERTZ, GuyJournal ContributionA1
1602010Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) SubstratesWang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Journal ContributionA1
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