BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

Results 121-140 of 200 (Search time: 0.009 seconds).

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Issue DateTitleContributor(s)TypeCat.
1212011Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric LayersMolle, A.; Baldovino, S.; Lamagna, L.; Spiga, S.; Lamperti, A.; Fanciulli, M.; Tsoutsou, D.; Golias, E.; Dimoulas, A.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M.Proceedings PaperC1
1222011Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices?BRAMMERTZ, Guy; Alian, A.; Lin, H. C.; Nyns, L.; Sioncke, S.; Merckling, C.; Wang, W. -E; Caymax, M.; Hoffmann, T. Y.Proceedings PaperC1
1232011Experimental and Modeling on Atomic Layer Deposition Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors with Various Surface TreatmentsTrinh, H. D.; Chang, E. Y.; BRAMMERTZ, Guy; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.Proceedings PaperC1
1242011Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing EnvironmentWaldron, Niamh; Ngoc Duy Nguyen; Lin, Dennis; BRAMMERTZ, Guy; Vincent, Benjamin; Firrincieli, Andrea; Winderick, Gillis; Sioncke, Sonja; de Jaeger, Brice; Wang, Gang; Mitard, Jerome; Wang, Wei-E; Heyns, Marc; Caymax, Matty; MEURIS, Marc; Absil, Philippe; Hoffman, Thomas Y.Proceedings PaperC1
1252011GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxideMerckling, C.; Sun, X.; Alian, A.; BRAMMERTZ, Guy; Afanas'ev, V. V.; Hoffmann, T. Y.; Heyns, M.; Caymax, M.; Dekoster, J.Journal ContributionA1
1262011Transitivity of band offsets between semiconductor heterojunctions and oxide insulatorsAfanas'ev, VV; Chou, HY; Houssa, M; Stesmans, A; Lamagna, L; Lamperti, A; Molle, A; Vincent, B; BRAMMERTZ, GuyJournal ContributionA1
1272011A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to In0.53Ga0.47As and InP CapacitorsBRAMMERTZ, Guy; Alian, Alireza; Lin, Dennis Han-Chung; MEURIS, Marc; Caymax, Matty; Wang, W. -E.Journal ContributionA1
1282011Ge Chemical Vapor Deposition on GaAs for Low Resistivity ContactsVincent, B.; Firrincieli, A.; Wang, W. -E.; Waldron, N.; Franquet, A.; Douhard, B.; Vandervorst, W.; Clarysse, T.; BRAMMERTZ, Guy; Loo, R.; Dekoster, J.; MEURIS, Marc; Caymax, M.Journal ContributionA1
1292011Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated GermaniumSioncke, S.; Lin, H. C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Muller, M.; Kolbe, M.; Beckhoff, B.; Caymax, M.Journal ContributionA1
1302011Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfacesAlian, Alireza; BRAMMERTZ, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, H. C.; Caymax, Matty; MEURIS, Marc; De Meyer, Kristin; Heyns, MarcJournal ContributionA1
1312011Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer depositionMolle, A.; Lamagna, L.; Grazianetti, C.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M.; Spiga, S.; Fanciulli, M.Journal ContributionA1
1322011Selective Area Growth of InP and Defect Elimination on Si (001) SubstratesWang, Gang; Leys, Maarten; Loo, Roger; Richard, Olivier; Bender, Hugo; BRAMMERTZ, Guy; Waldron, Niamh; Wang, Wei-E; Dekoster, Johan; Caymax, Matty; Seefeldt, Marc; Heyns, MarcJournal ContributionA1
1332011Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C.Y.; Penaud, J.; BRAMMERTZ, Guy; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; MEURIS, Marc; Heyns, M.; Caymax, M.Journal ContributionA1
1342011Growth of high quality InP layers in STI trenches on miscut Si (001) substratesWang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Journal ContributionA1
1352011S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursorSioncke, S.; Lin, H. C.; Nyns, L.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Rip, J.; Struyf, H.; De Gendt, S.; Mueller, M.; Beckhoff, B.; Caymax, M.Journal ContributionA1
1362011Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditionsAllan, A.; BRAMMERTZ, Guy; Waldron, N.; Merckling, C.; Hellings, G.; Lin, H. C.; Wang, W. E.; MEURIS, Marc; Simoen, E.; De Meyer, K.; Heyns, M.Journal ContributionA1
1372011Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interfaceFusi, M.; Lamagna, L.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A.Journal ContributionA1
1382011H2S molecular beam passivation of Ge(001)Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; BRAMMERTZ, Guy; Hong, M.; Kwo, J.; MEURIS, Marc; Dekoster, J.; Heyns, M. M.; Caymax, M.Journal ContributionA1
1392011Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materialsMolle, Alessandro; BRAMMERTZ, Guy; Dimoulas, Athanasios; Marchiori, ChiaraJournal ContributionA2
1402011Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substratesLamagna, L.; Fusi, M.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A.Journal ContributionA1
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