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| | Issue Date | Title | Contributor(s) | Type | Cat. |
| 1 | 2012 | Challenges for introducing Ge and III/V devices into CMOS technologies | Heyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Eneman, G.; Franco, J.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Houssa, M.; Kaczer, B.; LIN, Dan; Loo, R.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Sioncke, S.; Vandervorst, W.; Vincent, B.; Waldron, N.; Witters, L. | Proceedings Paper | C1 |
| 2 | 2012 | Trimethylaluminum-based Atomic Layer Deposition of MO2 (M=Zr, Hf): Gate Dielectrics on In0.53Ga0.47As(001) Substrates | Molle, A.; Cianci, E.; Lamperti, A.; Wiemer, C.; Baldovino, S.; Lamagna, L.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M. | Proceedings Paper | C1 |
| 3 | 2011 | Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices? | BRAMMERTZ, Guy; Alian, A.; Lin, H. C.; Nyns, L.; Sioncke, S.; Merckling, C.; Wang, W. -E; Caymax, M.; Hoffmann, T. Y. | Proceedings Paper | C1 |
| 4 | 2011 | Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric Layers | Molle, A.; Baldovino, S.; Lamagna, L.; Spiga, S.; Lamperti, A.; Fanciulli, M.; Tsoutsou, D.; Golias, E.; Dimoulas, A.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M. | Proceedings Paper | C1 |
| 5 | 2011 | Advancing CMOS beyond the Si roadmap with Ge and III/V devices | Heyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Chang, Y. C.; Chu, L. K.; De Jaeger, B.; Eneman, G.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Hoffmann, T. Y.; Houssa, M.; Huyghebaert, C.; Leonelli, D.; Lin, D.; Loo, R.; Magnus, W.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Orzali, T.; Rooyackers, R.; Sioncke, S.; Soree, B.; Sun, X.; Vandooren, A.; Verhulst, A. S.; Vincent, B.; Waldron, N.; Wang, G.; Wang, W. E.; Witters, L. | Proceedings Paper | C1 |
| 6 | 2011 | Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition | Molle, A.; Lamagna, L.; Grazianetti, C.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M.; Spiga, S.; Fanciulli, M. | Journal Contribution | A1 |
| 7 | 2011 | Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts | Vincent, B.; Firrincieli, A.; Wang, W. -E.; Waldron, N.; Franquet, A.; Douhard, B.; Vandervorst, W.; Clarysse, T.; BRAMMERTZ, Guy; Loo, R.; Dekoster, J.; MEURIS, Marc; Caymax, M. | Journal Contribution | A1 |
| 8 | 2011 | Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium | Sioncke, S.; Lin, H. C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Muller, M.; Kolbe, M.; Beckhoff, B.; Caymax, M. | Journal Contribution | A1 |
| 9 | 2011 | Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation | Merckling, C.; Chang, Y. C.; Lu, C.Y.; Penaud, J.; BRAMMERTZ, Guy; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; MEURIS, Marc; Heyns, M.; Caymax, M. | Journal Contribution | A1 |
| 10 | 2011 | H2S molecular beam passivation of Ge(001) | Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; BRAMMERTZ, Guy; Hong, M.; Kwo, J.; MEURIS, Marc; Dekoster, J.; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 11 | 2011 | S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor | Sioncke, S.; Lin, H. C.; Nyns, L.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Rip, J.; Struyf, H.; De Gendt, S.; Mueller, M.; Beckhoff, B.; Caymax, M. | Journal Contribution | A1 |
| 12 | 2011 | Growth of high quality InP layers in STI trenches on miscut Si (001) substrates | Wang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 13 | 2011 | GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxide | Merckling, C.; Sun, X.; Alian, A.; BRAMMERTZ, Guy; Afanas'ev, V. V.; Hoffmann, T. Y.; Heyns, M.; Caymax, M.; Dekoster, J. | Journal Contribution | A1 |
| 14 | 2011 | Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE | Cantoro, M.; Wang, G.; Lin, H. C.; Klekachev, A. V.; Richard, O.; Bender, H.; Kim, T. -G.; Clemente, F.; Adelmann, C.; van der Veen, M. H.; BRAMMERTZ, Guy; Degroote, S.; Leys, M.; Caymax, M.; Heyns, M. M.; De Gendt, S. | Journal Contribution | A1 |
| 15 | 2011 | Interface and Border Traps in Ge-Based Gate Stacks | Nyns, L.; LIN, Dan; BRAMMERTZ, Guy; Bellenger, F.; Shi, X.; Sioncke, S.; Van Elshocht, S.; Caymax, M. | Proceedings Paper | C1 |
| 16 | 2010 | Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) Substrates | Wang, G.; Nguyen, N. D.; Leys, M. R.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Proceedings Paper | C1 |
| 17 | 2010 | Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 18 | 2010 | High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmap | Heyns, M.; Bellenger, F.; BRAMMERTZ, Guy; Caymax, M.; De Gendt, S.; De Jaeger, B.; Delabie, A.; Eneman, G.; Groeseneken, G.; Houssa, M.; Leonelli, D.; Lin, D.; Martens, K.; Merckling, C.; MEURIS, Marc; Mitard, J.; Penaud, J.; Pourtois, G.; Scarrozza, M.; Simoen, E.; Van Elshocht, S.; Vandenberghe, W.; Vandooren, A.; Verhulst, A.; Wang, W.-E. | Proceedings Paper | C1 |
| 19 | 2010 | Catalytic forming gas anneal on III-V/Ge MOS systems | Wang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 20 | 2010 | Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications | Nguyen, N. D.; Wang, G.; BRAMMERTZ, Guy; Leys, M.; Waldron, N.; WINDERICKX, Jori; Lismont, K.; Dekoster, J.; Loo, R.; MEURIS, Marc; Degroote, S.; Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M.; Caymax, M. | Proceedings Paper | C1 |
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