BRAMMERTZ, Guy

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BRAMMERTZ, Guy
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guy.brammertz@uhasselt.be
 
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Publications

Results 121-140 of 205 (Search time: 0.009 seconds).

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Issue DateTitleContributor(s)TypeCat.
1212012InGaAs MOS Transistors Fabricated through a Digital-Etch Gate-Recess Process and the Influence of Forming Gas Anneal on Their Electrical BehaviorAlian, Alireza; Merckling, Clement; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, Marc; De Meyer, KristinJournal ContributionA1
1222012Integration of III-V on Si for High-Mobility CMOSWaldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Ong, Patrick; BRAMMERTZ, Guy; Eneman, Geert; Winderickx, Gillis; Caymax, Matty; Hellings, Geert; MEURIS, Marc; Horiguchi, Naoto; Thean, AaronProceedings PaperC1
1232012Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping TechniqueWaldron, Niamh; Wang, Gang; Ngoc Duy Nguyen; Orzali, Tommaso; Merckling, Clement; BRAMMERTZ, Guy; Winderickx, Gillis; Hellings, Geert; Ong, Patrick; Eneman, Geert; Caymax, Matty; MEURIS, Marc; Horiguchi, Naoto; Thean, AaronProceedings PaperC1
42011Ge Chemical Vapor Deposition on GaAs for Low Resistivity ContactsVincent, B.; Firrincieli, A.; Wang, W. -E.; Waldron, N.; Franquet, A.; Douhard, B.; Vandervorst, W.; Clarysse, T.; BRAMMERTZ, Guy; Loo, R.; Dekoster, J.; MEURIS, Marc; Caymax, M.Journal ContributionA1
52011Advancing CMOS beyond the Si roadmap with Ge and III/V devicesHeyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Chang, Y. C.; Chu, L. K.; De Jaeger, B.; Eneman, G.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Hoffmann, T. Y.; Houssa, M.; Huyghebaert, C.; Leonelli, D.; Lin, D.; Loo, R.; Magnus, W.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Orzali, T.; Rooyackers, R.; Sioncke, S.; Soree, B.; Sun, X.; Vandooren, A.; Verhulst, A. S.; Vincent, B.; Waldron, N.; Wang, G.; Wang, W. E.; Witters, L.Proceedings PaperC1
62011Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric LayersMolle, A.; Baldovino, S.; Lamagna, L.; Spiga, S.; Lamperti, A.; Fanciulli, M.; Tsoutsou, D.; Golias, E.; Dimoulas, A.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M.Proceedings PaperC1
72011Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPECantoro, M.; Wang, G.; Lin, H. C.; Klekachev, A. V.; Richard, O.; Bender, H.; Kim, T. -G.; Clemente, F.; Adelmann, C.; van der Veen, M. H.; BRAMMERTZ, Guy; Degroote, S.; Leys, M.; Caymax, M.; Heyns, M. M.; De Gendt, S.Journal ContributionA1
82011Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated GermaniumSioncke, S.; Lin, H. C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Muller, M.; Kolbe, M.; Beckhoff, B.; Caymax, M.Journal ContributionA1
92011Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices?BRAMMERTZ, Guy; Alian, A.; Lin, H. C.; Nyns, L.; Sioncke, S.; Merckling, C.; Wang, W. -E; Caymax, M.; Hoffmann, T. Y.Proceedings PaperC1
102011Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materialsMolle, Alessandro; BRAMMERTZ, Guy; Dimoulas, Athanasios; Marchiori, ChiaraJournal ContributionA2
112011Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C.Y.; Penaud, J.; BRAMMERTZ, Guy; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; MEURIS, Marc; Heyns, M.; Caymax, M.Journal ContributionA1
122011A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to In0.53Ga0.47As and InP CapacitorsBRAMMERTZ, Guy; Alian, Alireza; Lin, Dennis Han-Chung; MEURIS, Marc; Caymax, Matty; Wang, W. -E.Journal ContributionA1
132011Experimental and Modeling on Atomic Layer Deposition Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors with Various Surface TreatmentsTrinh, H. D.; Chang, E. Y.; BRAMMERTZ, Guy; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.Proceedings PaperC1
142011GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxideMerckling, C.; Sun, X.; Alian, A.; BRAMMERTZ, Guy; Afanas'ev, V. V.; Hoffmann, T. Y.; Heyns, M.; Caymax, M.; Dekoster, J.Journal ContributionA1
152011H2S molecular beam passivation of Ge(001)Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; BRAMMERTZ, Guy; Hong, M.; Kwo, J.; MEURIS, Marc; Dekoster, J.; Heyns, M. M.; Caymax, M.Journal ContributionA1
162011Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interfaceFusi, M.; Lamagna, L.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A.Journal ContributionA1
172011Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfacesAlian, Alireza; BRAMMERTZ, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, H. C.; Caymax, Matty; MEURIS, Marc; De Meyer, Kristin; Heyns, MarcJournal ContributionA1
182011Interface and Border Traps in Ge-Based Gate StacksNyns, L.; LIN, Dan; BRAMMERTZ, Guy; Bellenger, F.; Shi, X.; Sioncke, S.; Van Elshocht, S.; Caymax, M.Proceedings PaperC1
192011S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursorSioncke, S.; Lin, H. C.; Nyns, L.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Rip, J.; Struyf, H.; De Gendt, S.; Mueller, M.; Beckhoff, B.; Caymax, M.Journal ContributionA1
202011Selective Area Growth of InP and Defect Elimination on Si (001) SubstratesWang, Gang; Leys, Maarten; Loo, Roger; Richard, Olivier; Bender, Hugo; BRAMMERTZ, Guy; Waldron, Niamh; Wang, Wei-E; Dekoster, Johan; Caymax, Matty; Seefeldt, Marc; Heyns, MarcJournal ContributionA1
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