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| | Issue Date | Title | Contributor(s) | Type | Cat. |
| 1 | 2023 | Ge-Alloyed Kesterite Thin-Film Solar Cells: Previous Investigations and Current Status - a Comprehensive Review | SCAFFIDI, Romain; BIRANT, Gizem; DE WILD, Jessica; VERMANG, Bart; BRAMMERTZ, Guy; Flandre, Denis | Journal Contribution | A1 |
| 2 | 2023 | Integration of a superconducting nanowire single-photon detector into a confocal microscope for time-resolved photoluminescence (TRPL)-mapping: Sensitivity and time resolution | Buschmann, Volker; Ermilov, Eugeny; Koberling, Felix; Loidolt-Krueger, Maria; Breitlow, Jurgen; Kooiman, Hugo; Los, Johannes W. N.; van Willigen, Jan; Caldarola, Martin; Fognini, Andreas; Castaneda, Mario U.; DE WILD, Jessica; VERMANG, Bart; BRAMMERTZ, Guy; Erdmann, Rainer | Journal Contribution | A1 |
| 3 | 2023 | Fabrication and characterization of ZnS and ZnSe absorber layers for UV-selective transparent photovoltaics | BRAMMERTZ, Guy; Shahjahan, Mohammad; Bin Shams, Abdullah; Garcia, Alex J. Lopez; Perez-Rodriguez, Alejandro; DE WILD, Jessica; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 4 | 2023 | A study of bandgap-graded CZTGSe kesterite thin films for solar cell applications | SCAFFIDI, Romain; BRAMMERTZ, Guy; Wang, Yibing; Zaman, Arman Uz; Sasikumar, Keerthi; DE WILD, Jessica; Flandre, Denis; VERMANG, Bart | Journal Contribution | A1 |
| 5 | 2023 | Cu(In,Ga)Se-2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology | LOPES, Tomas; Teixeira, JP; Curado, M; Ferreira, BR; Oliveira, AJN; Cunha, JMV; Monteiro, M; Violas, A; Barbosa, JRS; Sousa, PC; Caha, I; Borme, J; Oliveira, K; Ring, J; Chen, WC; Zhou, Y; Takei, K; Niemi, E; Deepak, FL; Edoff, M; BRAMMERTZ, Guy; Fernandes, PA; VERMANG, Bart; Salome, PMP | Journal Contribution | A1 |
| 6 | 2023 | A review on barrier layers used in flexible stainless-steel based CIGS photovoltaic devices | HAMTAEI, Sarallah; BRAMMERTZ, Guy; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 7 | 2023 | Low-temperature admittance spectroscopy for defect characterization in Cu(In,Ga)(S,Se)2 thin-film solar cells | PARION, Jonathan; SCAFFIDI, Romain; Flandre, Denis; BRAMMERTZ, Guy; VERMANG, Bart | Proceedings Paper | C1 |
| 8 | 2023 | Controlled Li Alloying by Postsynthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells | Moser, Simon; Aribia, Abdessalem; SCAFFIDI, Romain; Gilshtein, Evgeniia; BRAMMERTZ, Guy; VERMANG, Bart; Tiwari, Ayodhya N; Carron, Romain | Journal Contribution | A1 |
| 9 | 2023 | Organic- inorganic nanoparticle composite as an electron injection/hole blocking layer in organic light emitting diodes for large area lighting applications | SHANIVARASANTHE NITHYANANDA KUMAR, Rachith; BREUGELMANS, Robbe; JIANG, Xueshi; AHADZADEH, Shabnam; BRAMMERTZ, Guy; VERDING, Pieter; DAENEN, Michael; VAN LANDEGHEM, Melissa; Cambré, Sofie; VANDEWAL, Koen; DEFERME, Wim | Journal Contribution | A1 |
| 10 | 2023 | Controlled Li Alloying by Post-Synthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells | Moser, Simon; Aribia, Abdessalem; SCAFFIDI, Romain; Gilshtein, Evgeniia; BRAMMERTZ, Guy; VERMANG, Bart; Tiwari, Ayodhya N.; Carron, Romain | Dataset | DS |
| 11 | 2023 | Ultrasonic spray coating of kesterite CZTS films from molecular inks | GHEDIYA, Prashant; SILVANO, Joao; VERDING, Pieter; SHANIVARASANTHE NITHYANANDA KUMAR, Rachith; BRAMMERTZ, Guy; PAULUS, Andreas; ELEN, Ken; RUTTENS, Bart; SHUKLA, Sudhanshu; D'HAEN, Jan; HARDY, An; VERMANG, Bart; DEFERME, Wim | Journal Contribution | A1 |
| 12 | 2022 | Dielectric Front Passivation for Cu(In,Ga)Se-2 Solar Cells: Status and Prospect | DE WILD, Jessica; SCAFFIDI, Romain; BRAMMERTZ, Guy; BIRANT, Gizem; VERMANG, Bart | Journal Contribution | A1 |
| 13 | 2022 | Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite | Ratz, Thomas; Ngoc Duy Nguyen; BRAMMERTZ, Guy; VERMANG, Bart; Raty, Jean-Yves | Journal Contribution | A1 |
| 14 | 2022 | Comparison of a bottom-up and a top-down approach for the creation of contact openings in a multi-stack oxide layer at the front interface of Cu(In, Ga)Se-2 | BULDU KOHL, Dilara; DE WILD, Jessica; KOHL, Thierry; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 15 | 2022 | A Novel Strategy for the Application of an Oxide Layer to the Front Interface of Cu(In,Ga)Se2 Thin Film Solar Cells: Al2O3/HfO2 Multi-Stack Design With Contact Openings | BULDU KOHL, Dilara; DE WILD, Jessica; KOHL, Thierry; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 16 | 2021 | Revealing the electronic structure, heterojunction band offset and alignment of Cu2ZnGeSe4: a combined experimental and computational study towards photovoltaic applications | Rondiya, Sachin R.; BULDU KOHL, Dilara; BRAMMERTZ, Guy; Jadhav, Yogesh A.; Cross, Russell W.; Ghosh, Hirendra N.; Davies, Thomas E.; Jadkar, Sandesh R.; Dzade, Nelson Y.; VERMANG, Bart | Journal Contribution | A1 |
| 17 | 2021 | Comparative Study of Al2O3 and HfO2 for Surface Passivation of Cu(In,Ga)Se-2 Thin Films: An Innovative Al2O3/HfO2 Multistack Design | SCAFFIDI, Romain; BULDU KOHL, Dilara; BRAMMERTZ, Guy; DE WILD, Jessica; KOHL, Thierry; BIRANT, Gizem; MEURIS, Marc; POORTMANS, Jef; Flandre, D; VERMANG, Bart | Journal Contribution | A1 |
| 18 | 2021 | Detrimental Impact of Na Upon Rb Postdeposition Treatments of Cu(In,Ga)Se-2 Absorber Layers | DE WILD, Jessica; BIRANT, Gizem; THIRUVALLUR EACHAMBADI, Ragha; KOHL, Thierry; BULDU KOHL, Dilara; BRAMMERTZ, Guy; MANCA, Jean; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 19 | 2021 | Ultrathin Cu(In,Ga)Se-2 Solar Cells with Ag/AlOx Passivating Back Reflector | DE WILD, Jessica; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 20 | 2021 | Opto-electronic properties and solar cell efficiency modelling of Cu2ZnXS4 (X = Sn, Ge, Si) kesterites | Raty, JY; BRAMMERTZ, Guy; VERMANG, Bart; Nguyen, ND; Ratz, T | Journal Contribution | A1 |
| 21 | 2021 | On the Importance of Joint Mitigation Strategies for Front, Bulk, and Rear Recombination in Ultrathin Cu(In,Ga)Se-2 Solar Cells | LOPES, Tomas; DE WILD, Jessica; Rocha, C; Violas, A; Cunha, JMV; Teixeira, JP; Curado, MA; Oliveira, AJN; Borme, J; BIRANT, Gizem; BRAMMERTZ, Guy; Fernandes, PA; VERMANG, Bart; Salome, PMP | Journal Contribution | A1 |
| 22 | 2021 | Creating nano-sized contact openings in the thick dielectric-based passivation layers for ultrathin CIGS solar cells: A cost and time-effective approach | BIRANT, Gizem; Kandybka, Irina; DE WILD, Jessica; BULDU KOHL, Dilara; KOHL, Thierry; RUTTENS, Bart; BRAMMERTZ, Guy; D'HAEN, Jan; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Proceedings Paper | C1 |
| 23 | 2021 | A multi-stack Al2O3/HfO2 design with contact openings for front surface of Cu(In,Ga)Se2 solar cells | BULDU KOHL, Dilara; DE WILD, Jessica; KOHL, Thierry; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Proceedings Paper | C1 |
| 24 | 2021 | Bias dependent admittance spectroscopy: the impact of sodium supply on the Cu(In,Ga)Se2 growth | KOHL, Thierry; DE WILD, Jessica; BRAMMERTZ, Guy; Buldu, D. G.; BIRANT, Gizem; van der Vleuten, M.; Simor, M.; Eachambadi, R. T.; MANCA, Jean; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Proceedings Paper | C1 |
| 25 | 2021 | Bias dependent admittance spectroscopy of thin film solar cells: KF post deposition treatment, accelerated lifetime testing, and their effect on the CVf loss maps | KOHL, Thierry; BRAMMERTZ, Guy; DE WILD, Jessica; BULDU KOHL, Dilara; BIRANT, Gizem; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 26 | 2021 | Investigating the experimental space for two-step Cu(In,Ga)(S,Se)2 absorber layer fabrication: A design of experiment approach | HAMTAEI, Sarallah; BRAMMERTZ, Guy; KOHL, Thierry; BULDU KOHL, Dilara; BIRANT, Gizem; DE WILD, Jessica; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 27 | 2021 | Dominant Processing Factors in Two-Step Fabrication of Pure Sulfide CIGS Absorbers | BRAMMERTZ, Guy; MEURIS, Marc; VERMANG, Bart; POORTMANS, Jef; HAMTAEI, Sarallah | Journal Contribution | A1 |
| 28 | 2021 | The path towards efficient wide band gap thin-film kesterite solar cells with transparent back contact for viable tandem application | Khelifi, Samira; BRAMMERTZ, Guy; Choubrac, Leo; Batuk, Maria; Yang, Sheng; MEURIS, Marc; Barreau, Nicolas; Hadermann, Joke; Vrielinck, Henk; Poelman, Dirk; Neyts, Kristiaan; VERMANG, Bart; Lauwaert, Johan | Journal Contribution | A1 |
| 29 | 2021 | Novel cost-effective approach to produce nano-sized contact openings in an aluminum oxide passivation layer up to 30 nm thick for CIGS solar cells | Kandybka, Iryna; BIRANT, Gizem; DE WILD, Jessica; BULDU KOHL, Dilara; KOHL, Thierry; THIRUVALLUR EACHAMBADI, Ragha; BRAMMERTZ, Guy; MANCA, Jean; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 30 | 2020 | Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfOx | BIRANT, Gizem; Mafalda, J; SCAFFIDI, Romain; DE WILD, Jessica; BULDU KOHL, Dilara; KOHL, Thierry; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 31 | 2020 | Bias-Dependent Admittance Spectroscopy of Thin-Film Solar Cells: Experiment and Simulation | BRAMMERTZ, Guy; KOHL, Thierry; DE WILD, Jessica; BULDU KOHL, Dilara; BIRANT, Gizem; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 32 | 2020 | Stability, reliability, upscaling and possible technological applications of kesterite solar cells | Larramona, G; Choné, C; Meissner, D; Ernits, K; Bras, P; Ren, Y; Martín-Salinas, R; Rodríguez-Villatoro, J L; VERMANG, Bart; BRAMMERTZ, Guy | Journal Contribution | A1 |
| 33 | 2020 | Study of Ammonium Sulfide Surface Treatment for Ultrathin Cu(In,Ga)Se(2)with Different Cu/(Ga plus In) Ratios | BULDU KOHL, Dilara; DE WILD, Jessica; KOHL, Thierry; BRAMMERTZ, Guy; BIRANT, Gizem; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 34 | 2020 | Numerical modelling of the performance-limiting factors in CZGSe solar cells | Yang, Sheng; Khelifi, Samira; BRAMMERTZ, Guy; Choubrac, Leo; Barreau, Nicolas; Bolt, Pieter; VERMANG, Bart; Lauwaert, Johan | Journal Contribution | A1 |
| 35 | 2020 | Sn Substitution by Ge: Strategies to Overcome the Open-Circuit Voltage Deficit of Kesterite Solar Cells | Choubrac, Leo; Baer, Marcus; Kozina, Xeniya; Felix, Roberto; Wilks, Regan G.; BRAMMERTZ, Guy; Levcenko, Sergiu; Arzel, Ludovic; Barreau, Nicolas; Harel, Sylvie; MEURIS, Marc; VERMANG, Bart | Journal Contribution | A1 |
| 36 | 2020 | Inclusion of Water in Cu(In, Ga)Se-2 Absorber Material During Accelerated Lifetime Testing | KOHL, Thierry; RIVAS RIVAS, Nicolas; DE WILD, Jessica; BULDU KOHL, Dilara; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; RENNER, Frank; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 37 | 2020 | KF Postdeposition Treatment in N-2 of Single-Stage Thin Cu(In,Ga)Se-2 Absorber Layers | DE WILD, Jessica; KOHL, Thierry; BULDU KOHL, Dilara; BIRANT, Gizem; Parragh, DM; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 38 | 2020 | Innovative and industrially viable approach to fabricate AlOx rear passivated ultra-thin Cu(In, Ga)Se2 (CIGS) solar cells | BIRANT, Gizem; DE WILD, Jessica; KOHL, Thierry; BULDU KOHL, Dilara; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 39 | 2020 | Intermediate scale bandgap fluctuations in ultrathin Cu(In,Ga)Se2 absorber layers | DE WILD, Jessica; BULDU KOHL, Dilara; KOHL, Thierry; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 40 | 2020 | Study of (AgxCu1-x)(2)ZnSn(S,Se)(4) monograins synthesized by molten salt method for solar cell applications | Oueslati, S; Kauk-Kuusik, M; Neubauer, C; Mikli, V; Meissner, D; BRAMMERTZ, Guy; VERMANG, Bart; Krustok, J; Grossberg, M | Journal Contribution | A1 |
| 41 | 2019 | Industrially Viable Rear Surface Passivation Approach for Cu( In,Ga)Se2 Solar Cells | BIRANT, Gizem; KOHL, Thierry; BULDU KOHL, Dilara; SURESH, Sunil; Nguyen, Thai Ha; Mafalda, Jorge; DE WILD, Jessica; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Conference Material | C2 |
| 42 | 2019 | Physical routes for the synthesis of kesterite | Ratz, T.; BRAMMERTZ, Guy; Caballero, R; León, M; Canulescu, S; Schou, J; Gütay, L; Pareek, D; Taskesen, T; Kim, D-H; Kang, J-K; Malerba, C; Redinger, A; Saucedo, E; Shin, B; Tampo, H; Timmo, K; Nguyen, N D; VERMANG, Bart | Journal Contribution | A1 |
| 43 | 2019 | A Study of the Degradation Mechanisms of Ultra Thin CIGS Solar Cells Submitted to a Damp Heat Environment | KOHL, Thierry; DE WILD, Jessica; RIVAS RIVAS, Nicolas; BULDU KOHL, Dilara; BIRANT, Gizem; BRAMMERTZ, Guy; RENNER, Frank; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Conference Material | C2 |
| 44 | 2019 | a study of the degradation mechanisms of Ultr-Thin CIGS Solar Cells subitted to a Damp Heat Environment | KOHL, Thierry; DE WILD, Jessica; RIVAS RIVAS, Nicolas; BULDU KOHL, Dilara; BIRANT, Gizem; BRAMMERTZ, Guy; RENNER, Frank; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Proceedings Paper | C2 |
| 45 | 2019 | A Study of the degradation mechanisms of Ultra-Thin CIGS Solar Cells subitted to a Damp Heat Environment | KOHL, Thierry; DE WILD, Jessica; RIVAS RIVAS, Nicolas; BULDU KOHL, Dilara; BIRANT, Gizem; BRAMMERTZ, Guy; RENNER, Frank; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Conference Material | C2 |
| 46 | 2019 | Crystallization properties of Cu2ZnGeSe4 | BRAMMERTZ, Guy; KOHL, Thierry; DE WILD, Jessica; MEURIS, Marc; VERMANG, Bart; POORTMANS, Jef | Journal Contribution | A1 |
| 47 | 2019 | Alkali treatment for single-stage co-evaporated thin CuIn0.7Ga0.3Se2 solar cells | DE WILD, Jessica; Simor, Marcel; BULDU KOHL, Dilara; KOHL, Thierry; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 48 | 2019 | A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell | SURESH, Sunil; DE WILD, Jessica; KOHL, Thierry; BULDU KOHL, Dilara; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; Isabella, Olindo; Zeman, Miro; VERMANG, Bart | Journal Contribution | A1 |
| 49 | 2019 | High V-oc upon KF Post-Deposition Treatment for Ultrathin Single Stage Coevaporated Cu(In, Ga)Se-2 Solar Cells | DE WILD, Jessica; BULDU KOHL, Dilara; Schnabel, T; Simor, M; KOHL, Thierry; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 50 | 2019 | Challenge in Cu-rich CuInSe2 thin film solar cells: Defect caused by etching | Elanzeery, Hossam; Melchiorre, Michele; Sood, Mohit; Babbe, Finn; Werner, Florian; BRAMMERTZ, Guy; Siebentritt, Susanne | Journal Contribution | A1 |
| 51 | 2019 | Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices | VERMANG, Bart; BRAMMERTZ, Guy; MEURIS, Marc; Schnabel, Thomas; Ahlswede, Erik; Choubrac, Leo; Harel, Sylvie; Cardinaud, Christophe; Arzel, Ludovic; Barreau, Nicolas; van Deelen, Joop; Bolt, Pieter-Jan; Bras, Patrice; Ren, Yi; Jaremalm, Eric; Khelifi, Samira; Yang, Sheng; Lauwaert, Johan; Batuk, Maria; Hadermann, Joke; Kozina, Xeniya; Handick, Evelyn; Hartmann, Claudia; Gerlach, Dominic; Matsuda, Asahiko; Ueda, Shigenori; Chikyow, Toyohiro; Felix, Roberto; Zhang, Yufeng; Wilks, Regan G.; Bär, Marcus | Journal Contribution | A1 |
| 52 | 2019 | Study of Room Temperature Photoluminescence For 1-stage Co-Evaporated Ultra-Thin Cu(In,Ga)Se2 Solar Cells | BULDU KOHL, Dilara; DE WILD, Jessica; KOHL, Thierry; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Proceedings Paper | C1 |
| 53 | 2019 | Room temperature photoluminescence analysis of alkali treated single-stage thin Cu(In,Ga)Se2 absorber layers | DE WILD, Jessica; KOHL, Thierry; BULDU KOHL, Dilara; BIRANT, Gizem; Parragh, David Mate; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Proceedings Paper | C1 |
| 54 | 2019 | A study of the degradation mechanisms of ultra-thin CIGS solar cells submitted to a damp heat environment | KOHL, Thierry; DE WILD, Jessica; BULDU KOHL, Dilara; BIRANT, Gizem; BRAMMERTZ, Guy; RIVAS RIVAS, Nicolas; RENNER, Frank; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Proceedings Paper | C1 |
| 55 | 2018 | Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)<sub>2</sub> Thin Film Solar Cells | BULDU KOHL, Dilara; DE WILD, Jessica; KOHL, Thierry; SURESH, Sunil; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A2 |
| 56 | 2018 | Wet processing in state-of-the-art Cu(In,Ga)(S,Se)2 thin film solar cells | BULDU KOHL, Dilara; DE WILD, Jessica; KOHL, Thierry; SURESH, Sunil; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A2 |
| 57 | 2018 | Selenium and Sulphur replacement dynamics in CZTSSe and CZGSSe kesterite materials | Neuwirth, Markus; KOHL, Thierry; BRAMMERTZ, Guy; DE WILD, Jessica; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart; Kalt, Heinz; Hetterich, Michael | Proceedings Paper | C1 |
| 58 | 2018 | 7.6% CZGSe Solar Cells Thanks to Optimized CdS Chemical Bath Deposition | Choubrac, Leo; BRAMMERTZ, Guy; Barreau, Nicolas; Arzel, Ludovic; Harel, Sylvie; MEURIS, Marc; VERMANG, Bart | Journal Contribution | A1 |
| 59 | 2018 | Fabrication of high band gap kesterite solar cell absorber materials for tandem applications | KOHL, Thierry; BRAMMERTZ, Guy; DE WILD, Jessica; Neuwirth, M.; MEURIS, Marc; POORTMANS, Jef; VERMANG, Bart | Journal Contribution | A1 |
| 60 | 2018 | Doping of Cu2ZnSnSe4 solar cells with Na+ or K+ alkali ions | Sahayaraj, Sylvester; BRAMMERTZ, Guy; VERMANG, Bart; Mule, Aniket; Schnabel, Thomas; MEURIS, Marc; Vleugels, Jef; POORTMANS, Jef | Journal Contribution | A1 |
| 61 | 2017 | The outcome of replacing Sn completely by Ge in Kesterite Cu2ZnSnSe4 solar cells | Sahayaraj, S.; BRAMMERTZ, Guy; VERMANG, Bart; Schnabel, T.; Ahlswede, E.; Huang, Z.; Ranjbar, S.; MEURIS, Marc; Vleugels, J.; POORTMANS, Jef | Proceedings Paper | C1 |
| 62 | 2017 | Alkali Assisted Reduction of Open-Circuit Voltage Deficit in CZTSe Solar Cells | Garud, Siddhartha; VERMANG, Bart; Sahayaraj, Sylvester; Ranjbar, Samaneh; BRAMMERTZ, Guy; MEURIS, Marc; Smets, Arno; POORTMANS, Jef | Proceedings Paper | C1 |
| 63 | 2017 | Fabrication of ternary and quaternary chalcogenide compounds based on Cu, Zn, Sn and Si for thin film photovoltaic applications | BRAMMERTZ, Guy; VERMANG, Bart; ElAnzeery, Hossam; Sahayaraj, Sylvester; Ranjbar, Samaneh; MEURIS, Marc; POORTMANS, Jef | Proceedings Paper | C1 |
| 64 | 2017 | Optoelectronic properties of thin film Cu2ZnGeSe4 solar cells | Sahayaraj, S; BRAMMERTZ, Guy; VERMANG, Bart; Schnabel, T; Ahlswede, E; Huang, Z.; Ranjbar, S; MEURIS, Marc; Vleugels, J; POORTMANS, Jef | Journal Contribution | A1 |
| 65 | 2017 | Modelling of Cu2ZnSnSe4-CdS-ZnO thin film solar cell | Ben Messaoud, Khaled; BRAMMERTZ, Guy; Buffiere, Marie; Oueslati, Souhaib; El Anzeery, Hossam; MEURIS, Marc; Amlouk, Mosbah; POORTMANS, Jef | Journal Contribution | A1 |
| 66 | 2017 | P-N Junction Passivation in Kesterite Solar Cells by Use of Solution-Processed TiO2 Layer | Ranjbar, Samaneh; Hadipour, Afshin; VERMANG, Bart; Batuk, Maria; Hadermann, Joke; Garud, Siddhartha; Sahayaraj, Sylvester; MEURIS, Marc; BRAMMERTZ, Guy; da Cunha, Antonio F.; POORTMANS, Jef | Journal Contribution | A1 |
| 67 | 2017 | Effect of Sn/Zn/Cu precursor stack thickness on two-step processed kesterite solar cells | Ranjbar, Samaneh; BRAMMERTZ, Guy; VERMANG, Bart; Hadipour, Afshin; Sylvester, M.; Mule, Aniket; MEURIS, Marc; da Cunha, A. F.; POORTMANS, Jef | Journal Contribution | A1 |
| 68 | 2017 | Improvement of kesterite solar cell performance by solution synthesized MoO3 interfacial layer | Ranjbar, Samaneh; BRAMMERTZ, Guy; VERMANG, Bart; Hadipour, Afshin; Cong, Shuren; Suganuma, Katsuaki; Schnabel, Thomas; MEURIS, Marc; da Cunha, A. F.; POORTMANS, Jef | Journal Contribution | A1 |
| 69 | 2017 | Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cells | Sahayaraj, Sylvester; BRAMMERTZ, Guy; VERMANG, Bart; Ranjbar, Samaneh; MEURIS, Marc; Vleugels, Jef; POORTMANS, Jef | Journal Contribution | A1 |
| 70 | 2017 | Synthesis and characterization of (Cd,Zn)S buffer layer for Cu2ZnSnSe4 solar cells | Ben Messaoud, Khaled; Buffière, Marie; BRAMMERTZ, Guy; Lenaers, Nick; BOYEN, Hans-Gerd; Sahayaraj, Sylvester; MEURIS, Marc; Amlouk, Mosbah; POORTMANS, Jef | Journal Contribution | A1 |
| 71 | 2017 | Effect of different alkali (Li, Na, K, Rb, Cs) metals on Cu2ZnSnSe4 solar cells | Mule, Aniket; VERMANG, Bart; Sylvester, M.; BRAMMERTZ, Guy; Ranjbar, Samaneh; Schnabel, Thomas; Gampa, Nikhil; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 72 | 2017 | Effect of ammonium sulfide treatments on the surface properties of Cu2ZnSnSe4 thin films | Buffiere, Marie; BRAMMERTZ, Guy; El Mel, Abdel-Aziz; Barreau, Nicolas; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 73 | 2016 | Effect of Cu content and temperature on the properties of Cu2ZnSnSe4 solar cells | Sahayaraj, Sylvester; BRAMMERTZ, Guy; Buffiere, Marie; MEURIS, Marc; Vleugels, Jef; POORTMANS, Jef | Journal Contribution | A1 |
| 74 | 2016 | Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cells | VERMANG, Bart; Mule, Aniket; Gampa, Nikhil; Sahayaraj, Sylvester; Ranjbar, Samaneh; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef | Proceedings Paper | C1 |
| 75 | 2016 | Fabrication and characterization of ternary Cu8SiS6 and Cu8SiSe6 thin film layers for optoelectronic applications | BRAMMERTZ, Guy; VERMANG, Bart; ElAnzeery, H; Sahayaraj, S; Ranjbar, S; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 76 | 2016 | Oxygen-Induced Degradation in C-60-Based Organic Solar Cells: Relation Between Film Properties and Device Performance | Bastos, Joao P.; Voroshazi, Eszter; Fron, Eduard; BRAMMERTZ, Guy; VANGERVEN, Tim; Van der Auweraer, Mark; POORTMANS, Jef; Cheyns, David | Journal Contribution | A1 |
| 77 | 2015 | High efficiency perovskite solar cells using a PCBM/ZnO double electron transport layer and a short air-aging step | Qiu, Weiming; Buffiere, Marie; BRAMMERTZ, Guy; Paetzold, Ulrich W.; Froyen , Ludo; Heremans, Paul; Cheyns, David | Journal Contribution | A1 |
| 78 | 2015 | In-situ monitoring of the accelerated performance degradation of thin film solar cells | Theelen, Mirjam; Steijvers, Henk; Barreau, Nicolas; Buffiere, Marie; BRAMMERTZ, Guy; Flammini, Marco Giacomo; van Vugt, Robert Jan; Vroon, Zeger; Zeman, Miro | Proceedings Paper | C1 |
| 79 | 2015 | Development of Co-evaporated In2S3 Buffer Layer for Cu2ZnSnSe4 Thin Film Solar Cells | Buffiere, Marie; Barreau, Nicolas; BRAMMERTZ, Guy; Sahayaraj, Sylvester; MEURIS, Marc; POORTMANS, Jef | Proceedings Paper | C1 |
| 80 | 2015 | Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigations | BRAMMERTZ, Guy; Buffière, Marie; Verbist, Christophe; Oueslati, Souhaib; Bekaert, Jonas; ElAnzeery, Hossam; Ben Messaoud, Khaled; Sahayaraj, Sylvester; Batuk, Maria; Hadermann, Joke; Koeble, Christine; MEURIS, Marc; POORTMANS, Jef | Proceedings Paper | C1 |
| 81 | 2015 | Multistep deposition of Cu2Si(S,Se)(3) and Cu2ZnSiSe4 high band gap absorber materials for thin film solar cells | ElAnzeery, Hossam; Buffière, Marie; Ben Messaoud, Khaled; Oueslati, Souhaib; BRAMMERTZ, Guy; El Daif, Ounsi; Cheyns, David; Guindi, Rafik; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 82 | 2015 | Study of alternative back contacts for thin film Cu2ZnSnSe4-based solar cells | Oueslati, Souhaib; BRAMMERTZ, Guy; Buffiere, Marie; ElAnzeery, Hossam; Mangin, Denis; ElDaif, Ounsi; Touayar, Oualid; Koble, Christine; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 83 | 2015 | KCN Chemical Etch for Interface Engineering in Cu2ZnSnSe4 Solar Cells | Buffiere, Marie; BRAMMERTZ, Guy; Sahayaraj, Sylvester; Batuk, Maria; Khelifi, Samira; Mangin, Denis; El Mel, Abdel-Aziz; Arzel, Ludovic; Hadermann, Joke; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 84 | 2015 | Photoluminescence study and observation of unusual optical transitions in Cu2ZnSnSe4/CdS/ZnO solar cells | Oueslati, Souhaib; BRAMMERTZ, Guy; Buffiere, Marie; Koeble, Christine; Oualid, Touayar; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 85 | 2015 | Surface Cleaning and Passivation Using (NH4)(2)S Treatment for Cu(In,Ga)Se-2 Solar Cells: A Safe Alternative to KCN | Buffiere, Marie; El Mel, Abdel-Aziz; Lenaers, Nick; BRAMMERTZ, Guy; Zaghi, Armin E.; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 86 | 2015 | Effect of selenium content of CuInSex alloy nanopowder precursors on recrystallization of printed CuInSe2 absorber layers during selenization heat treatment | Zaghi, Armin E.; Buffiere, Marie; Koo, Jaseok; BRAMMERTZ, Guy; Batuk, Maria; Verbist, Christophe; Hadermann, Joke; Kim, Woo Young; MEURIS, Marc; POORTMANS, Jef; Vleugels, Jef | Journal Contribution | A1 |
| 87 | 2015 | Selenization of printed Cu-In-Se alloy nanopowder layers for fabrication of CuInSe2 thin film solar cells | Zaghi, Armin E.; Buffiere, Marie; BRAMMERTZ, Guy; Lenaers, Nick; MEURIS, Marc; POORTMANS, Jef; Vleugels, Jef | Journal Contribution | A1 |
| 88 | 2015 | Physical characterization of Cu2ZnGeSe4 thin films from annealing of Cu-Zn-Ge precursor layers | Buffiere, M.; ElAnzeery, H.; Oueslati, S.; Ben Messaoud, Khaled; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 89 | 2015 | Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells | Oueslati, S.; BRAMMERTZ, Guy; Buffiere, M.; ElAnzeery, H.; Touayar, O.; Koeble, C.; Bekaert, Jonas; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 90 | 2015 | Impact of the Cd2+ treatment on the electrical properties of Cu2ZnSnSe4 and Cu(In,Ga)Se-2 solar cells | Ben Messaoud, Khaled; Buffiere, Marie; BRAMMERTZ, Guy; ElAnzeery, Hossam; Oueslati, Souhaib; Hamon, Jonathan; Kniknie, Bas J.; MEURIS, Marc; Amlouk, Mosbah; POORTMANS, Jef | Journal Contribution | A1 |
| 91 | 2015 | Investigation of Properties Limiting Efficiency in Cu2ZnSnSe4-Based Solar Cells | BRAMMERTZ, Guy; Oueslati, Souhaib; Buffiere, Marie; Bekaert, Jonas; El Anzeery, Hossam; Ben Messaoud, Khaled; Sahayaraj, Sylvester; Nuytten, Thomas; Koeble, Christine; MEURIS, Marc; Poortmans, Jozef | Journal Contribution | A1 |
| 92 | 2015 | Refractive index extraction and thickness optimization of Cu2ZnSnSe4 thin film solar cells | ElAnzeery, Hossam; El Daif, Ounsi; Buffiere, Marie; Oueslati, Souhaib; Ben Messaoud, Khaled; Agten, Dries; BRAMMERTZ, Guy; Guindi, Rafik; Kniknie, Bas; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 93 | 2014 | Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH4)2 Chemical Treatment | Buffiere, Marie; El Mel, Abdel Aziz; Lenaers, Nick; BRAMMERTZ, Guy; Zaghi, Armin E.; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 94 | 2014 | Mechanical synthesis of high purity Cu-In-Se alloy nanopowder as precursor for printed CISe thin film solar cells | Zaghi, Armin E.; Buffiere, Marie; BRAMMERTZ, Guy; Batuk, Maria; Lenaers, Nick; Kniknie, Bas; Hadermann, Joke; MEURIS, Marc; POORTMANS, Jef; Vleugels, Jef | Journal Contribution | A1 |
| 95 | 2014 | Spectral current-voltage analysis of kesterite solar cells | Buffiere, M.; BRAMMERTZ, Guy; Oueslati, S.; El Anzeery, H.; Bekaert, Jonas; Ben Messaoud, Khaled; Köble, C.; Khelifi, S.; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 96 | 2014 | Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cells | Buffiere, M.; BRAMMERTZ, Guy; Batuk, Maria; Verbist, C.; Mangin, Denis; Koble, C.; Hadermann, J.; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 97 | 2013 | Analysis of Border Traps in High-kappa Gate Dielectrics on High-Mobility Channels | Simoen, E.; Lin, H. -C.; Alian, A.; BRAMMERTZ, Guy; Merckling, C.; Mitard, J.; Claeys, C. | Proceedings Paper | C1 |
| 98 | 2013 | Recombination Stability in Polycrystalline Cu2ZnSnSe4 Thin Films | Buffiere, Marie; BRAMMERTZ, Guy; El Mel, Abdel-Aziz; Lenaers, Nick; Ren, Yi; Zaghi, Armin E.; Mols, Yves; Koeble, Christine; Vleugels, Jef; MEURIS, Marc; POORTMANS, Jef | Proceedings Paper | C1 |
| 99 | 2013 | Correlation between physical, electrical, and optical properties of Cu2ZnSnSe4 based solar cells | BRAMMERTZ, Guy; Buffiere, M.; Mevel, Y.; Ren, Y.; Zaghi, A. E.; Lenaers, N.; Mols, Y.; Koeble, C.; Vleugels, J.; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 100 | 2013 | Electrical characterization of Cu2ZnSnSe4 solar cells from selenization of sputtered metal layers | BRAMMERTZ, Guy; Ren, Yi; Buffiere, Marie; Mertens, Sofie; Hendrickx, Jurgen; Marko, Hakim; Zaghi, Armin E.; Lenaers, Nick; Koeble, Christine; Vleugels, Jef; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 101 | 2013 | Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects | Simoen, Eddy; Lin, Dennis Han-Chung; Alian, A.; BRAMMERTZ, Guy; Merckling, C.; Mitard, J.; Claeys, Cor | Journal Contribution | A1 |
| 102 | 2013 | Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells | BRAMMERTZ, Guy; Buffiere, M.; Oueslati, S.; ElAnzeery, H.; Ben Messaoud, Khaled; Sahayaraj, S.; Koeble, C.; MEURIS, Marc; POORTMANS, Jef | Journal Contribution | A1 |
| 103 | 2012 | Integration of III-V on Si for High-Mobility CMOS | Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Ong, Patrick; BRAMMERTZ, Guy; Eneman, Geert; Winderickx, Gillis; Caymax, Matty; Hellings, Geert; MEURIS, Marc; Horiguchi, Naoto; Thean, Aaron | Proceedings Paper | C1 |
| 104 | 2012 | Challenges for introducing Ge and III/V devices into CMOS technologies | Heyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Eneman, G.; Franco, J.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Houssa, M.; Kaczer, B.; LIN, Dan; Loo, R.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Sioncke, S.; Vandervorst, W.; Vincent, B.; Waldron, N.; Witters, L. | Proceedings Paper | C1 |
| 105 | 2012 | Trimethylaluminum-based Atomic Layer Deposition of MO2 (M=Zr, Hf): Gate Dielectrics on In0.53Ga0.47As(001) Substrates | Molle, A.; Cianci, E.; Lamperti, A.; Wiemer, C.; Baldovino, S.; Lamagna, L.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M. | Proceedings Paper | C1 |
| 106 | 2012 | Preparation of micro flake ink for low cost printing of CIS-Se absorber layers | Zaghi, Armin. E.; BRAMMERTZ, Guy; Buffiere, Marie; Vanmeensel, Kim; MEURIS, Marc; POORTMANS, Jef; Vleugels, Jef | Proceedings Paper | C1 |
| 107 | 2012 | Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors | Sun, Xiao; Merckling, Clement; BRAMMERTZ, Guy; Lin, Dennis; Dekoster, Johan; Cui, Sharon; Ma, T. P. | Journal Contribution | A1 |
| 108 | 2012 | AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact | Sun, Xiao; Cui, Sharon; Alian, Alireza; BRAMMERTZ, Guy; Merckling, Clement; Lin, Dennis; Ma, T. P. | Journal Contribution | A1 |
| 109 | 2012 | Oxide Trapping in the InGaAs-Al2O3 System and the Role of Sulfur in Reducing the Al2O3 Trap Density | Alian, Alireza; BRAMMERTZ, Guy; Degraeve, Robin; Cho, Moonju; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Caymax, Matty; MEURIS, Marc; De Meyer, Kristin; Heyns, Marc | Journal Contribution | A1 |
| 110 | 2012 | InGaAs MOS Transistors Fabricated through a Digital-Etch Gate-Recess Process and the Influence of Forming Gas Anneal on Their Electrical Behavior | Alian, Alireza; Merckling, Clement; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, Marc; De Meyer, Kristin | Journal Contribution | A1 |
| 111 | 2012 | Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique | Waldron, Niamh; Wang, Gang; Ngoc Duy Nguyen; Orzali, Tommaso; Merckling, Clement; BRAMMERTZ, Guy; Winderickx, Gillis; Hellings, Geert; Ong, Patrick; Eneman, Geert; Caymax, Matty; MEURIS, Marc; Horiguchi, Naoto; Thean, Aaron | Proceedings Paper | C1 |
| 112 | 2011 | Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates | Lin, Dennis; BRAMMERTZ, Guy; Sioncke, Sonja; Nyns, Laura; Alian, Alireza; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Hoffmann, Thomas | Proceedings Paper | C1 |
| 113 | 2011 | Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices? | BRAMMERTZ, Guy; Alian, A.; Lin, H. C.; Nyns, L.; Sioncke, S.; Merckling, C.; Wang, W. -E; Caymax, M.; Hoffmann, T. Y. | Proceedings Paper | C1 |
| 114 | 2011 | Experimental and Modeling on Atomic Layer Deposition Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors with Various Surface Treatments | Trinh, H. D.; Chang, E. Y.; BRAMMERTZ, Guy; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T. | Proceedings Paper | C1 |
| 115 | 2011 | Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric Layers | Molle, A.; Baldovino, S.; Lamagna, L.; Spiga, S.; Lamperti, A.; Fanciulli, M.; Tsoutsou, D.; Golias, E.; Dimoulas, A.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M. | Proceedings Paper | C1 |
| 116 | 2011 | Advancing CMOS beyond the Si roadmap with Ge and III/V devices | Heyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Chang, Y. C.; Chu, L. K.; De Jaeger, B.; Eneman, G.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Hoffmann, T. Y.; Houssa, M.; Huyghebaert, C.; Leonelli, D.; Lin, D.; Loo, R.; Magnus, W.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Orzali, T.; Rooyackers, R.; Sioncke, S.; Soree, B.; Sun, X.; Vandooren, A.; Verhulst, A. S.; Vincent, B.; Waldron, N.; Wang, G.; Wang, W. E.; Witters, L. | Proceedings Paper | C1 |
| 117 | 2011 | Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment | Waldron, Niamh; Ngoc Duy Nguyen; Lin, Dennis; BRAMMERTZ, Guy; Vincent, Benjamin; Firrincieli, Andrea; Winderick, Gillis; Sioncke, Sonja; de Jaeger, Brice; Wang, Gang; Mitard, Jerome; Wang, Wei-E; Heyns, Marc; Caymax, Matty; MEURIS, Marc; Absil, Philippe; Hoffman, Thomas Y. | Proceedings Paper | C1 |
| 118 | 2011 | Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition | Molle, A.; Lamagna, L.; Grazianetti, C.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M.; Spiga, S.; Fanciulli, M. | Journal Contribution | A1 |
| 119 | 2011 | Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces | Alian, Alireza; BRAMMERTZ, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, H. C.; Caymax, Matty; MEURIS, Marc; De Meyer, Kristin; Heyns, Marc | Journal Contribution | A1 |
| 120 | 2011 | Transitivity of band offsets between semiconductor heterojunctions and oxide insulators | Afanas'ev, VV; Chou, HY; Houssa, M; Stesmans, A; Lamagna, L; Lamperti, A; Molle, A; Vincent, B; BRAMMERTZ, Guy | Journal Contribution | A1 |
| 121 | 2011 | A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to In0.53Ga0.47As and InP Capacitors | BRAMMERTZ, Guy; Alian, Alireza; Lin, Dennis Han-Chung; MEURIS, Marc; Caymax, Matty; Wang, W. -E. | Journal Contribution | A1 |
| 122 | 2011 | Selective Area Growth of InP and Defect Elimination on Si (001) Substrates | Wang, Gang; Leys, Maarten; Loo, Roger; Richard, Olivier; Bender, Hugo; BRAMMERTZ, Guy; Waldron, Niamh; Wang, Wei-E; Dekoster, Johan; Caymax, Matty; Seefeldt, Marc; Heyns, Marc | Journal Contribution | A1 |
| 123 | 2011 | Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts | Vincent, B.; Firrincieli, A.; Wang, W. -E.; Waldron, N.; Franquet, A.; Douhard, B.; Vandervorst, W.; Clarysse, T.; BRAMMERTZ, Guy; Loo, R.; Dekoster, J.; MEURIS, Marc; Caymax, M. | Journal Contribution | A1 |
| 124 | 2011 | Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium | Sioncke, S.; Lin, H. C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Muller, M.; Kolbe, M.; Beckhoff, B.; Caymax, M. | Journal Contribution | A1 |
| 125 | 2011 | Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation | Merckling, C.; Chang, Y. C.; Lu, C.Y.; Penaud, J.; BRAMMERTZ, Guy; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; MEURIS, Marc; Heyns, M.; Caymax, M. | Journal Contribution | A1 |
| 126 | 2011 | Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface | Fusi, M.; Lamagna, L.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A. | Journal Contribution | A1 |
| 127 | 2011 | Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions | Allan, A.; BRAMMERTZ, Guy; Waldron, N.; Merckling, C.; Hellings, G.; Lin, H. C.; Wang, W. E.; MEURIS, Marc; Simoen, E.; De Meyer, K.; Heyns, M. | Journal Contribution | A1 |
| 128 | 2011 | H2S molecular beam passivation of Ge(001) | Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; BRAMMERTZ, Guy; Hong, M.; Kwo, J.; MEURIS, Marc; Dekoster, J.; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 129 | 2011 | S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor | Sioncke, S.; Lin, H. C.; Nyns, L.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Rip, J.; Struyf, H.; De Gendt, S.; Mueller, M.; Beckhoff, B.; Caymax, M. | Journal Contribution | A1 |
| 130 | 2011 | Growth of high quality InP layers in STI trenches on miscut Si (001) substrates | Wang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 131 | 2011 | Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments | Trinh, H. D.; BRAMMERTZ, Guy; Chang, E. Y.; Lu, C. Y.; Kuo, C. I.; Nguyen, H. Q.; Lin, Y. C.; Tran, B. T.; Wong, Y. Y.; Kakushima, K.; Iwai, H. | Journal Contribution | A1 |
| 132 | 2011 | Improved Performance of In0.53Ga0.47As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition | Molle, Alessandro; Lamagna, Luca; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco; Merckling, Clement; BRAMMERTZ, Guy; Caymax, Matty | Journal Contribution | A1 |
| 133 | 2011 | GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxide | Merckling, C.; Sun, X.; Alian, A.; BRAMMERTZ, Guy; Afanas'ev, V. V.; Hoffmann, T. Y.; Heyns, M.; Caymax, M.; Dekoster, J. | Journal Contribution | A1 |
| 134 | 2011 | Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates | Lamagna, L.; Fusi, M.; Spiga, S.; Fanciulli, M.; BRAMMERTZ, Guy; Merckling, C.; MEURIS, Marc; Molle, A. | Journal Contribution | A1 |
| 135 | 2011 | Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materials | Molle, Alessandro; BRAMMERTZ, Guy; Dimoulas, Athanasios; Marchiori, Chiara | Journal Contribution | A2 |
| 136 | 2011 | Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE | Cantoro, M.; Wang, G.; Lin, H. C.; Klekachev, A. V.; Richard, O.; Bender, H.; Kim, T. -G.; Clemente, F.; Adelmann, C.; van der Veen, M. H.; BRAMMERTZ, Guy; Degroote, S.; Leys, M.; Caymax, M.; Heyns, M. M.; De Gendt, S. | Journal Contribution | A1 |
| 137 | 2011 | Interface and Border Traps in Ge-Based Gate Stacks | Nyns, L.; LIN, Dan; BRAMMERTZ, Guy; Bellenger, F.; Shi, X.; Sioncke, S.; Van Elshocht, S.; Caymax, M. | Proceedings Paper | C1 |
| 138 | 2010 | Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) Substrates | Wang, G.; Nguyen, N. D.; Leys, M. R.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Proceedings Paper | C1 |
| 139 | 2010 | Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 140 | 2010 | High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmap | Heyns, M.; Bellenger, F.; BRAMMERTZ, Guy; Caymax, M.; De Gendt, S.; De Jaeger, B.; Delabie, A.; Eneman, G.; Groeseneken, G.; Houssa, M.; Leonelli, D.; Lin, D.; Martens, K.; Merckling, C.; MEURIS, Marc; Mitard, J.; Penaud, J.; Pourtois, G.; Scarrozza, M.; Simoen, E.; Van Elshocht, S.; Vandenberghe, W.; Vandooren, A.; Verhulst, A.; Wang, W.-E. | Proceedings Paper | C1 |
| 141 | 2010 | Catalytic forming gas anneal on III-V/Ge MOS systems | Wang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 142 | 2010 | Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates | Molle, A.; BRAMMERTZ, Guy; Lamagna, L.; Spiga, S.; MEURIS, Marc; Fanciulli, M. | Proceedings Paper | C1 |
| 143 | 2010 | Influence of interface traps on high-mobility channel performance | Hellings, Geert; Eneman, Geert; BRAMMERTZ, Guy; Martens, Koen; Mitard, Jerome; Wang, Wei-E; Hoffmann, Thomas; MEURIS, Marc; De Meyer, Kristin | Proceedings Paper | C1 |
| 144 | 2010 | Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications | Nguyen, N. D.; Wang, G.; BRAMMERTZ, Guy; Leys, M.; Waldron, N.; WINDERICKX, Jori; Lismont, K.; Dekoster, J.; Loo, R.; MEURIS, Marc; Degroote, S.; Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M.; Caymax, M. | Proceedings Paper | C1 |
| 145 | 2010 | ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation | Sioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D.; Tallarida, M. | Proceedings Paper | C1 |
| 146 | 2010 | Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS | Lin, D.; Waldron, N.; BRAMMERTZ, Guy; MARTENS, Klara; Wang, W. -E; Sioncke, S.; Delabie, A.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T. | Proceedings Paper | C1 |
| 147 | 2010 | Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marc; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecke, Philippe; Verhulst, Anne; Wang, Wei-E | Proceedings Paper | C1 |
| 148 | 2010 | Electrical characterization of InGaAs ultra-shallow junctions | Petersen, Dirch H.; Hansen, Ole; Boggild, Peter; Lin, Rong; Nielsen, Peter F.; Lin, Dennis; Adelmann, Christoph; Alian, Alireza; Merckling, Clement; Penaud, Julien; BRAMMERTZ, Guy; Goossens, Jozefien; Vandervorst, Wilfried; Clarysse, Trudo | Journal Contribution | A1 |
| 149 | 2010 | Selective area growth of high quality InP on Si (001) substrates | Wang, G.; Leys, M. R.; Loo, R.; Richard, O.; Bender, H.; Waldron, N.; BRAMMERTZ, Guy; Dekoster, J.; Wang, W.; Seefeldt, M.; Caymax, M.; Heyns, M. M. | Journal Contribution | A1 |
| 150 | 2010 | Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates | Wang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M. | Journal Contribution | A1 |
| 151 | 2010 | High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning | Loo, R.; Wang, G.; Souriau, L.; Lin, J. C.; Takeuchi, S.; BRAMMERTZ, Guy; Caymax, M. | Journal Contribution | A1 |
| 152 | 2010 | Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks | Molle, Alessandro; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; BRAMMERTZ, Guy; MEURIS, Marc | Journal Contribution | A1 |
| 153 | 2010 | Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane | Vincent, B.; Loo, R.; Vandervorst, W.; BRAMMERTZ, Guy; Caymax, M. | Journal Contribution | A1 |
| 154 | 2010 | Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications | Passlack, Matthias; Droopad, Ravi; BRAMMERTZ, Guy | Journal Contribution | A1 |
| 155 | 2010 | Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures | Benbakhti, B.; Ayubi-Moak, J. S.; Kalna, K.; Lin, D.; Hellings, G.; BRAMMERTZ, Guy; De Meyer, K.; Thayne, I.; Asenov, A. | Journal Contribution | A1 |
| 156 | 2009 | Electrical Properties of III-V/Oxide Interfaces | BRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Alian, A.; Merckling, C.; Penaud, J.; Kohen, D.; Wang, W. -E; Sioncke, S.; Delabie, A.; MEURIS, Marc; Cayrnax, M.; Heyns, M. | Proceedings Paper | C1 |
| 157 | 2009 | Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution | Lin, D.; BRAMMERTZ, Guy; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Wang, W. E.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T. | Proceedings Paper | C1 |
| 158 | 2009 | Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy | Cantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S. | Proceedings Paper | C1 |
| 159 | 2009 | High-kappa Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOS | Heyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven; Wang, Wei-E | Proceedings Paper | C1 |
| 160 | 2009 | Epitaxial Ge on Standard STI Patterned Si Wafers: High Quality Virtual Substrates for Ge pMOS and III/V nMOS | Loo, R.; Wang, G.; Souriau, L.; Lin, J. C.; Takeuchi, S.; BRAMMERTZ, Guy; Caymax, M. | Proceedings Paper | C1 |
| 161 | 2009 | Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) | Hurley, P. K.; O'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; MacHale, J.; Quinn, A. J.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Sonnet, A. M.; Galatage, R. V.; Jivani, M. N.; Vogel, E. M.; Wallace, R. M.; Pemble, M. E. | Proceedings Paper | C1 |
| 162 | 2009 | Ge and III/V devices for advanced CMOS | Heyns, Marc; Adelmann, Christoph; BRAMMERTZ, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mittard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-E | Proceedings Paper | C1 |
| 163 | 2009 | On the interface state density at In0.53Ga0.47As/oxide interfaces | BRAMMERTZ, Guy; Lin, H-C.; Caymax, M.; MEURIS, Marc; Heyns, M.; Passlack, M. | Journal Contribution | A1 |
| 164 | 2009 | Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2 | Afanas'ev, V. V.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B. | Journal Contribution | A1 |
| 165 | 2009 | The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces | Lin, H. C.; BRAMMERTZ, Guy; Martens, Koen; de Valicourt, Guilhem; Negre, Laurent; Wang, Wei-E; Tsai, Wilman; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 166 | 2009 | Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates | Molle, Alessandro; BRAMMERTZ, Guy; Lamagna, Luca; Fanciulli, Marco; MEURIS, Marc; Spiga, Sabina | Journal Contribution | A1 |
| 167 | 2009 | Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods | O'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; Pemble, M. E.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Hurley, P. K. | Journal Contribution | A1 |
| 168 | 2009 | Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy | Cantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S. | Journal Contribution | A1 |
| 169 | 2009 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substrates | Sioncke, Sonja; Delabie, Annelies; BRAMMERTZ, Guy; Conard, Thierry; Franquet, Alexis; Caymax, Matty; Urbanzcyk, Adam; Heyns, Marc; MEURIS, Marc; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M. | Journal Contribution | A1 |
| 170 | 2009 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper) | Caymax, Matty; BRAMMERTZ, Guy; Delabie, Annelies; Sioncke, Sonja; Lin, Dennis; Scarrozza, Marco; Pourtois, Geoffrey; Wang, Wei-E; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 171 | 2009 | Optical characterization of thin epitaxial GaAs films on Ge substrates | Wu, J. D.; Huang, Y. S.; BRAMMERTZ, Guy; Tiong, K. K. | Journal Contribution | A1 |
| 172 | 2009 | Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator | Lin, Han-Chung; Wang, Wei-E.; BRAMMERTZ, Guy; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 173 | 2009 | Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2 | Afanas'ev, V. V.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B. | Journal Contribution | A1 |
| 174 | 2009 | Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS | Merckling, C.; Penaud, J.; Kohen, D.; Bellenger, F.; Alian, A.; BRAMMERTZ, Guy; El-Kazzi, M.; Houssa, M.; Dekoster, J.; Caymax, M.; MEURIS, Marc; Heyns, M. M. | Journal Contribution | A1 |
| 175 | 2009 | A DLTS study of Pt/Al2O3/InxGa1 - xAs Capacitors | Simoen, E.; BRAMMERTZ, Guy; Penaud, J.; Merckling, C.; Lin, H. C.; Wang, W. -E.; MEURIS, Marc | Proceedings Paper | C1 |
| 176 | 2008 | Alternative Channel Materials for MOS Devices | Heyns, M; Adelmann, C; BRAMMERTZ, Guy; Brunco, D; Caymax, M; De Jaeger, B; Delabie, A; Eneman, G; Houssa, M; Lin, D; Martens, K; Merckling, C; MEURIS, Marc; Mittard, J; Penaud, J; Pourtois, G; Scarrozza, M; Simoen, E; Sioncke, S; Wang, WE | Proceedings Paper | C1 |
| 177 | 2008 | Capacitance-Voltage (CV) Characterization of GaAs-Oxide Interfaces | BRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Mercier, D.; Merckling, C.; Penaud, J.; Adelmann, C.; Sioncke, S.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M. | Proceedings Paper | C1 |
| 178 | 2008 | Atomic Layer Deposition of High-kappa Dielectric Layers on Ge and III-V MOS Channels | Delabie, A.; Alian, A.; Bellenger, F.; BRAMMERTZ, Guy; Brunco, D. P.; Caymax, M.; Conard, T.; Franquet, A.; Houssa, M.; Sioncke, S.; Van Elshocht, S.; van Hemmen, J. L.; Keuning, W.; Kessels, W. M. M.; Afanas'ev, V. V.; Stesmans, A.; Heyns, M. M.; MEURIS, Marc | Proceedings Paper | C1 |
| 179 | 2008 | Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2 | Afanas'ev, V. V.; Badylevich, M.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B. | Journal Contribution | A1 |
| 180 | 2008 | Capacitance-voltage characterization of GaAs–Al2O3 interfaces | BRAMMERTZ, Guy; Lin, H. -C.; Martens, K.; Mercier, D.; Sioncke, S.; Delabie, A.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M. | Journal Contribution | A1 |
| 181 | 2008 | On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates | Martens, Koen; Chui, Chi On; BRAMMERTZ, Guy; De Jaeger, Brice; Kuzum, Duygu; MEURIS, Marc; Heyns, Marc M.; Krishnamohan, Tejas; Saraswat, Krishna; MAES, Herman; Groeseneken, Guido | Journal Contribution | A1 |
| 182 | 2008 | Capacitance–Voltage Characterization of GaAs–Oxide Interfaces | BRAMMERTZ, Guy; Lin, H. C.; Martens, K.; Mercier, D.; Merckling, C.; Penaud, J.; Adelmann, C.; Sioncke, S.; Wang, W. E.; Caymax, M.; MEURIS, Marc; Heyns, M. | Journal Contribution | A1 |
| 183 | 2008 | GaAs on Ge for CMOS | BRAMMERTZ, Guy; Caymax, M.; MEURIS, Marc; Heyns, M.; Mols, Y.; Degroote, S.; Leys, M. | Journal Contribution | A1 |
| 184 | 2008 | Accurate carrier profiling of n-type GaAs junctions | Clarysse, T.; BRAMMERTZ, Guy; Vanhaeren, D.; Eyben, P.; Goossens, J.; Clemente, F.; MEURIS, Marc; Vandervorst, W.; Srnanek, R.; Kinder, R.; Li, Zhiqiang; Sciana, B.; Radziewicz, D. | Journal Contribution | A1 |
| 185 | 2008 | Structure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructures | Molle, Alessandro; Spiga, Sabina; Andreozzi, Andrea; Fanciulli, Marco; BRAMMERTZ, Guy; MEURIS, Marc | Journal Contribution | A1 |
| 186 | 2007 | Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures | BRAMMERTZ, Guy; Martens, Koen; Sioncke, Sonja; Delabie, Annelies; Caymax, Matty; MEURIS, Marc; Heyns, Marc | Journal Contribution | A1 |
| 187 | 2007 | Comparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOS | BRAMMERTZ, Guy; Heyns, M.; MEURIS, Marc; Caymax, M.; Jiang, D. | Journal Contribution | A1 |
| 188 | 2007 | Surface recombination velocity in GaAs and In0.15Ga0.85As thin films | BRAMMERTZ, Guy; Heyns, Marc; MEURIS, Marc; Caymax, Matty; Jiang, Dehuai; Mols, Yves; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf | Journal Contribution | A1 |
| 189 | 2006 | How Trace Analytical Techniques Contribute to the Research and Development of Ge and III/V Semiconductor Devices | Hellin, David; Rip, Jens; Bonzom, Renaud; NELIS, Daniel; Sioncke, Sonja; BRAMMERTZ, Guy; Caymax, Matty R.; MEURIS, Marc; De Gendt, S.; Vinckier, Chris | Proceedings Paper | C1 |
| 190 | 2006 | Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit | MEURIS, Marc; Martens, K.; De Jaegar, B.; Van Steenbergen, J.; Bonzom, Renaud; Caymax, Matty R.; Houssa, M.; Kaczer, Ben; Leys, Frederik; NELIS, Daniel; Opsomer, Karl; Pourghaderi, A. M.; Satta, A.; Simoen, Eddy R.; Terzieva, Valentina; Souriau, Laurent; Bellenger, F.; BRAMMERTZ, Guy; Nicholas, G.; Scarozza, M.; Huyghebaert, C.; Winderickx, Gillis; Loo, Roger; Clarysse, Trudo; Conard, Thierry; Bender, Hugo; Benedetti, Alessandro; Todi, R.; Delabie, A.; Hellin, David; Van Daele, Benny; Sioncke, Sonja; Mertens, Paul W.; De Meyer, Krtistien; Van Elshocht, Sven; Vandervorst, Wilfried; Zimmerman, Paul; Brunco, David P.; Heyns, Marc M. | Proceedings Paper | C1 |
| 191 | 2006 | Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern | BRAMMERTZ, Guy; Caymax, Matty R.; Mols, Yves; Degroote, Stefan; Leys, Maarten; Van Steenbergen, Jan; Winderickx, Gilles; Borghs, Gustaaf; MEURIS, Marc | Proceedings Paper | C1 |
| 192 | 2006 | Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates | BRAMMERTZ, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, Matty | Journal Contribution | A1 |
| 193 | 2006 | Selective epitaxial growth of GaAs on Ge by MOCVD | BRAMMERTZ, Guy; Mols, Yves; Degroote, Stefan; Leys, Maarten; Van Steenbergen, Jan; Borghs, Gustaaf; Caymax, Matty | Journal Contribution | A1 |
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5
0
5
0
false